Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si 2H6

T. Motooka, H. Abe, P. Fons, T. Tokuyama

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Epitaxial growth processes of Si from ArF laser-excited Si 2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6.

Original languageEnglish
Pages (from-to)3473-3475
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number25
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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