Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si 2H6

T. Motooka; H. Abe; P. Fons; T. Tokuyama

doi:10.1063/1.110124

Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si ₂H₆

T. Motooka, H. Abe, P. Fons, T. Tokuyama

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Epitaxial growth processes of Si from ArF laser-excited Si ₂H₆ supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature T_s=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T _s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si₂H₆ jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si₂H₆.

Original language	English
Pages (from-to)	3473-3475
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	25
DOIs	https://doi.org/10.1063/1.110124
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110124

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title = "Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si 2H6",

abstract = "Epitaxial growth processes of Si from ArF laser-excited Si 2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6.",

author = "T. Motooka and H. Abe and P. Fons and T. Tokuyama",

year = "1993",

doi = "10.1063/1.110124",

language = "English",

volume = "63",

pages = "3473--3475",

journal = "Applied Physics Letters",

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T1 - Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si 2H6

AU - Motooka, T.

AU - Abe, H.

AU - Fons, P.

AU - Tokuyama, T.

PY - 1993

Y1 - 1993

N2 - Epitaxial growth processes of Si from ArF laser-excited Si 2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6.

AB - Epitaxial growth processes of Si from ArF laser-excited Si 2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

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Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si ₂H₆

Abstract

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