Epitaxial growth of ZnO thin films on LiNbO3 substrates

K. Matsubara, P. Fons, A. Yamada, M. Watanabe, S. Niki

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [112̄0] ZnO//[101̄0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.

Original languageEnglish
Pages (from-to)238-240
Number of pages3
JournalThin Solid Films
Volume347
Issue number1-2
DOIs
Publication statusPublished - 1999 Jun 22
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Epitaxial growth of ZnO thin films on LiNbO<sub>3</sub> substrates'. Together they form a unique fingerprint.

  • Cite this