Epitaxial growth of ZnO thin films on LiNbO3 substrates

K. Matsubara; P. Fons; A. Yamada; M. Watanabe; S. Niki

doi:10.1016/S0040-6090(99)00037-1

Epitaxial growth of ZnO thin films on LiNbO₃ substrates

K. Matsubara, P. Fons, A. Yamada, M. Watanabe, S. Niki

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

ZnO thin films have been epitaxially grown on LiNbO₃ (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO₃ substrate was determined to be [112̄0] ZnO//[101̄0] LiNbO₃. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.

Original language	English
Pages (from-to)	238-240
Number of pages	3
Journal	Thin Solid Films
Volume	347
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(99)00037-1
Publication status	Published - 1999 Jun 22
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Epitaxial growth of ZnO thin films on LiNbO3 substrates",

abstract = "ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [11{\=2}0] ZnO//[10{\=1}0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.",

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T1 - Epitaxial growth of ZnO thin films on LiNbO3 substrates

AU - Matsubara, K.

AU - Fons, P.

AU - Yamada, A.

AU - Watanabe, M.

AU - Niki, S.

PY - 1999/6/22

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N2 - ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [112̄0] ZnO//[101̄0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.

AB - ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [112̄0] ZnO//[101̄0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.

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