Abstract
ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by X-ray diffraction. The ω-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550°C was 0.46°. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [112̄0] ZnO//[101̄0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire.
Original language | English |
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Pages (from-to) | 238-240 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 347 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1999 Jun 22 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry