Epitaxial phase-change materials

Peter Rodenbach, Raffaella Calarco, Karthick Perumal, Ferhat Katmis, Michael Hanke, André Proessdorf, Wolfgang Braun, Alessandro Giussani, Achim Trampert, Henning Riechert, Paul Fons, Alexander V. Kolobov

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Epitaxial Ge 2Sb 2Te 5 thin layers were successfully grown in the metastable cubic phase on both slightly lattice-mismatched (GaSb) and highly lattice-mismatched (Si) templates. The higher quality of the films grown on (111)-oriented substrates is attributed to the tendency to form layered structures in the stable bulk phase as well as to the nature of distortion in the metastable cubic phase.

Original languageEnglish
Pages (from-to)415-417
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume6
Issue number11
DOIs
Publication statusPublished - 2012 Nov

Keywords

  • GIXRD
  • Ge Sb Te
  • HRTEM
  • Molecular beam epitaxy
  • RHEED

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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    Rodenbach, P., Calarco, R., Perumal, K., Katmis, F., Hanke, M., Proessdorf, A., Braun, W., Giussani, A., Trampert, A., Riechert, H., Fons, P., & Kolobov, A. V. (2012). Epitaxial phase-change materials. Physica Status Solidi - Rapid Research Letters, 6(11), 415-417. https://doi.org/10.1002/pssr.201206387