Epitaxial phase change materials: Growth and switching of Ge 2Sb2Te5 on GaSb(001)

Wolfgang Braun; Roman Shayduk; Timur Flissikowski; Holger T. Grahn; Henning Riechert; Paul Fons; Alex Kolobov

doi:10.1557/proc-1160-h14-05

Epitaxial phase change materials: Growth and switching of Ge ₂Sb₂Te₅ on GaSb(001)

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Epitaxial Ge₂Sb₂Te₅ has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.

Original language	English
Title of host publication	Materials and Physics for Nonvolatile Memories
Publisher	Materials Research Society
Pages	177-183
Number of pages	7
ISBN (Print)	9781605111339
DOIs	https://doi.org/10.1557/proc-1160-h14-05
Publication status	Published - 2009
Externally published	Yes
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 2009 Apr 14 → 2009 Apr 17

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1160
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	09/4/14 → 09/4/17

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-1160-h14-05

Cite this

Braun, W., Shayduk, R., Flissikowski, T., Grahn, H. T., Riechert, H., Fons, P., & Kolobov, A. (2009). Epitaxial phase change materials: Growth and switching of Ge ₂Sb₂Te₅ on GaSb(001). In Materials and Physics for Nonvolatile Memories (pp. 177-183). (Materials Research Society Symposium Proceedings; Vol. 1160). Materials Research Society. https://doi.org/10.1557/proc-1160-h14-05

Epitaxial phase change materials: Growth and switching of Ge ₂Sb₂Te₅ on GaSb(001). / Braun, Wolfgang; Shayduk, Roman; Flissikowski, Timur et al.
Materials and Physics for Nonvolatile Memories. Materials Research Society, 2009. p. 177-183 (Materials Research Society Symposium Proceedings; Vol. 1160).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Braun, W, Shayduk, R, Flissikowski, T, Grahn, HT, Riechert, H, Fons, P & Kolobov, A 2009, Epitaxial phase change materials: Growth and switching of Ge ₂Sb₂Te₅ on GaSb(001). in Materials and Physics for Nonvolatile Memories. Materials Research Society Symposium Proceedings, vol. 1160, Materials Research Society, pp. 177-183, 2009 MRS Spring Meeting, San Francisco, CA, United States, 09/4/14. https://doi.org/10.1557/proc-1160-h14-05

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