Epitaxial phase change materials: Growth and switching of Ge 2Sb2Te5 on GaSb(001)

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.

Original languageEnglish
Title of host publicationMaterials and Physics for Nonvolatile Memories
PublisherMaterials Research Society
Pages177-183
Number of pages7
ISBN (Print)9781605111339
DOIs
Publication statusPublished - 2009 Jan 1
Externally publishedYes
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 142009 Apr 17

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1160
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1409/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Braun, W., Shayduk, R., Flissikowski, T., Grahn, H. T., Riechert, H., Fons, P., & Kolobov, A. (2009). Epitaxial phase change materials: Growth and switching of Ge 2Sb2Te5 on GaSb(001). In Materials and Physics for Nonvolatile Memories (pp. 177-183). (Materials Research Society Symposium Proceedings; Vol. 1160). Materials Research Society. https://doi.org/10.1557/proc-1160-h14-05