Epitaxy of Ge-Sb-Te phase-change memory alloys

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Manfred Ramsteiner, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

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Abstract

The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

Original languageEnglish
Article number041902
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009 Feb 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Braun, W., Shayduk, R., Flissikowski, T., Ramsteiner, M., Grahn, H. T., Riechert, H., Fons, P., & Kolobov, A. (2009). Epitaxy of Ge-Sb-Te phase-change memory alloys. Applied Physics Letters, 94(4), [041902]. https://doi.org/10.1063/1.3072615