The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.
|Journal||Applied Physics Letters|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)