Epitaxy of Ge-Sb-Te phase-change memory alloys

Wolfgang Braun; Roman Shayduk; Timur Flissikowski; Manfred Ramsteiner; Holger T. Grahn; Henning Riechert; Paul Fons; Alex Kolobov

doi:10.1063/1.3072615

Epitaxy of Ge-Sb-Te phase-change memory alloys

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Manfred Ramsteiner, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge ₂ Sb₂ Te₅ composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

Original language	English
Article number	041902
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3072615
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3072615

Cite this

@article{b33b90f142c74c94941b9c2bde16b6d7,

title = "Epitaxy of Ge-Sb-Te phase-change memory alloys",

abstract = "The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.",

author = "Wolfgang Braun and Roman Shayduk and Timur Flissikowski and Manfred Ramsteiner and Grahn, {Holger T.} and Henning Riechert and Paul Fons and Alex Kolobov",

note = "Funding Information: The authors would like to acknowledge the support of Steffen Behnke, Claudia Herrmann, and Anne-Kathrin Bluhm. Support for this work was provided by the Deutsche Forschungsgemeinschaft (BR 1723/3–1) and the Japan Science and Technology Agency through an international research corporation grant. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

doi = "10.1063/1.3072615",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Epitaxy of Ge-Sb-Te phase-change memory alloys

AU - Braun, Wolfgang

AU - Shayduk, Roman

AU - Flissikowski, Timur

AU - Ramsteiner, Manfred

AU - Grahn, Holger T.

AU - Riechert, Henning

AU - Fons, Paul

AU - Kolobov, Alex

N1 - Funding Information: The authors would like to acknowledge the support of Steffen Behnke, Claudia Herrmann, and Anne-Kathrin Bluhm. Support for this work was provided by the Deutsche Forschungsgemeinschaft (BR 1723/3–1) and the Japan Science and Technology Agency through an international research corporation grant. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

AB - The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=59349097976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59349097976&partnerID=8YFLogxK

U2 - 10.1063/1.3072615

DO - 10.1063/1.3072615

M3 - Article

AN - SCOPUS:59349097976

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041902

ER -

Epitaxy of Ge-Sb-Te phase-change memory alloys

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this