Erratum: Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties (Applied Physics Letters (2013) 103 (143903))

Shogo Ishizuka; Akimasa Yamada; Paul J. Fons; Hajime Shibata; Shigeru Niki

doi:10.1063/1.4858977

Erratum: Impact of a binary Ga₂Se₃ precursor on ternary CuGaSe₂ thin-film and solar cell device properties (Applied Physics Letters (2013) 103 (143903))

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	269903
Journal	Applied Physics Letters
Volume	103
Issue number	26
DOIs	https://doi.org/10.1063/1.4858977
Publication status	Published - 2013 Dec 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4858977

Cite this

Erratum : Impact of a binary Ga₂Se₃ precursor on ternary CuGaSe₂ thin-film and solar cell device properties (Applied Physics Letters (2013) 103 (143903)). / Ishizuka, Shogo; Yamada, Akimasa; Fons, Paul J.; Shibata, Hajime; Niki, Shigeru.

In: Applied Physics Letters, Vol. 103, No. 26, 269903, 23.12.2013.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties (Applied Physics Letters (2013) 103 (143903))

ASJC Scopus subject areas

Access to Document

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Cite this

Erratum: Impact of a binary Ga₂Se₃ precursor on ternary CuGaSe₂ thin-film and solar cell device properties (Applied Physics Letters (2013) 103 (143903))