Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M Itoh, Akira Fujiwara

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

Original languageEnglish
Article number222103
JournalApplied Physics Letters
Volume93
Issue number22
DOIs
Publication statusPublished - 2008

Fingerprint

metal oxide semiconductors
escape
nanowires
field effect transistors
silicon
electrons
quantum dots
ejection
charging
time measurement

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor. / Miyamoto, Satoru; Nishiguchi, Katsuhiko; Ono, Yukinori; Itoh, Kohei M; Fujiwara, Akira.

In: Applied Physics Letters, Vol. 93, No. 22, 222103, 2008.

Research output: Contribution to journalArticle

@article{d5e62dc2b1e845c594615ac943871534,
title = "Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor",
abstract = "Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.",
author = "Satoru Miyamoto and Katsuhiko Nishiguchi and Yukinori Ono and Itoh, {Kohei M} and Akira Fujiwara",
year = "2008",
doi = "10.1063/1.3028649",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

AU - Miyamoto, Satoru

AU - Nishiguchi, Katsuhiko

AU - Ono, Yukinori

AU - Itoh, Kohei M

AU - Fujiwara, Akira

PY - 2008

Y1 - 2008

N2 - Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

AB - Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

UR - http://www.scopus.com/inward/record.url?scp=57349111767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57349111767&partnerID=8YFLogxK

U2 - 10.1063/1.3028649

DO - 10.1063/1.3028649

M3 - Article

AN - SCOPUS:57349111767

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222103

ER -