Estimation of breakdown electric-field strength while reflecting local structures of SiO 2 gate dielectrics using first-principles molecular orbital calculation technique

Hiroshi Seki, Yasuhiro Shibuya, Daisuke Kobayashi, Hiroshi Nohira, Kenji Yasuoka, Kazuyuki Hirose

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To achieve metal-oxide-semiconductor field-effect transistors (MOSFETs) with high reliability, it is important to investigate the dielectric breakdown of gate oxide films of MOSFETs. It is known that dielectric breakdown is usually due to the presence of defects in films. Estimating the breakdown electric-field strength while reflecting local structures such as defects is important for investigation of the reliability of gate SiO 2 films. In this study, we introduce the "recovery rate", which is a parameter potentially capable of estimating the breakdown electric-field strength while reflecting the local structures of the film. The recovery rate has a strong correlation with the breakdown electric-field strength of bulk Si and Al compounds. Using this correlation, we estimate the breakdown electric-field strength of SiO 2 with oxygen vacancies and strains.

Original languageEnglish
Article number04DA07
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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