Abstract
Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 151-153 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781467373562 |
| DOIs | |
| Publication status | Published - 2015 Nov 10 |
| Event | IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 - Grenoble, France Duration: 2015 May 18 → 2015 May 21 |
Other
| Other | IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 |
|---|---|
| Country | France |
| City | Grenoble |
| Period | 15/5/18 → 15/5/21 |
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Keywords
- Adhesives
- Copper
- Correlation
- Decision support systems
- Integrated circuits
- Periodic structures
- Silicon compounds
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. / Kamiya, S.; Chen, C.; Shishido, N.; Omiya, Masaki; Koiwa, K.; Sato, H.; Nishida, M.; Suzuki, T.; Nakamura, T.; Nokuo, T.; Suzuki, T.
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 151-153 7325649.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures
AU - Kamiya, S.
AU - Chen, C.
AU - Shishido, N.
AU - Omiya, Masaki
AU - Koiwa, K.
AU - Sato, H.
AU - Nishida, M.
AU - Suzuki, T.
AU - Nakamura, T.
AU - Nokuo, T.
AU - Suzuki, T.
PY - 2015/11/10
Y1 - 2015/11/10
N2 - Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.
AB - Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.
KW - Adhesives
KW - Copper
KW - Correlation
KW - Decision support systems
KW - Integrated circuits
KW - Periodic structures
KW - Silicon compounds
UR - http://www.scopus.com/inward/record.url?scp=84961912348&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961912348&partnerID=8YFLogxK
U2 - 10.1109/IITC-MAM.2015.7325649
DO - 10.1109/IITC-MAM.2015.7325649
M3 - Conference contribution
AN - SCOPUS:84961912348
SP - 151
EP - 153
BT - 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -