Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures

S. Kamiya; C. Chen; N. Shishido; Masaki Omiya; K. Koiwa; H. Sato; M. Nishida; T. Suzuki; T. Nakamura; T. Nokuo; T. Suzuki

doi:10.1109/IITC-MAM.2015.7325649

Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures

S. Kamiya, C. Chen, N. Shishido, Masaki Omiya, K. Koiwa, H. Sato, M. Nishida, T. Suzuki, T. Nakamura, T. Nokuo, T. Suzuki

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.

Original language	English
Title of host publication	2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	151-153
Number of pages	3
ISBN (Electronic)	9781467373562
DOIs	https://doi.org/10.1109/IITC-MAM.2015.7325649
Publication status	Published - 2015 Nov 10
Event	IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 - Grenoble, France Duration: 2015 May 18 → 2015 May 21

Other

Other	IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
Country	France
City	Grenoble
Period	15/5/18 → 15/5/21

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Keywords

Adhesives
Copper
Correlation
Decision support systems
Integrated circuits
Periodic structures
Silicon compounds

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Kamiya, S., Chen, C., Shishido, N., Omiya, M., Koiwa, K., Sato, H., Nishida, M., Suzuki, T., Nakamura, T., Nokuo, T., & Suzuki, T. (2015). Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 (pp. 151-153). [7325649] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-MAM.2015.7325649

Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. / Kamiya, S.; Chen, C.; Shishido, N.; Omiya, Masaki; Koiwa, K.; Sato, H.; Nishida, M.; Suzuki, T.; Nakamura, T.; Nokuo, T.; Suzuki, T.

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 151-153 7325649.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamiya, S, Chen, C, Shishido, N, Omiya, M, Koiwa, K, Sato, H, Nishida, M, Suzuki, T, Nakamura, T, Nokuo, T & Suzuki, T 2015, Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. in 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015., 7325649, Institute of Electrical and Electronics Engineers Inc., pp. 151-153, IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015, Grenoble, France, 15/5/18. https://doi.org/10.1109/IITC-MAM.2015.7325649

Kamiya S, Chen C, Shishido N, Omiya M, Koiwa K, Sato H et al. Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 151-153. 7325649 https://doi.org/10.1109/IITC-MAM.2015.7325649

Kamiya, S. ; Chen, C. ; Shishido, N. ; Omiya, Masaki ; Koiwa, K. ; Sato, H. ; Nishida, M. ; Suzuki, T. ; Nakamura, T. ; Nokuo, T. ; Suzuki, T. / Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 151-153

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abstract = "Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.",

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10.1109/IITC-MAM.2015.7325649