Abstract
Layer-by-layer self-assembled multilayer films were prepared by the alternate deposition of poly(allylamine hydrochloride)(PAH) and poly(acrylic acid)(PAA). DC current-voltage characteristics of Au/(PAH/PAA)150/Au (MIM) sandwich structure devices after the annealing treatment of several temperatures were measured. It was found that the resistivity of the MIM devices drastically increased by annealing at the temperature which is higher than the glass transition temperature (Tg) from the self-assembled multilayer films. We consider that it is very important to remove the moisture from the inside of the self-assembled multilayer films to obtain the higher resistivity. And it was ascertained by Fourier transform infrared radiation spectroscopy measurement that the structural change in the self-assembled multilayer films, which was induced by micro-Brownian motion in the vicinity of the Tg, also affected the higher resistivity.
| Original language | English |
|---|---|
| Pages (from-to) | 238-242 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 438-439 |
| DOIs | |
| Publication status | Published - 2003 Aug 22 |
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Keywords
- Annealing treatment
- Layer-by-layer self-assembled multilayer films
- Resistivity
- Structural change
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Evaluation of electrical characteristics of the layer-by-layer self-assembled films after the various annealing temperatures. / Yamagata, Yoshinori; Shiratori, Seimei.
In: Thin Solid Films, Vol. 438-439, 22.08.2003, p. 238-242.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Evaluation of electrical characteristics of the layer-by-layer self-assembled films after the various annealing temperatures
AU - Yamagata, Yoshinori
AU - Shiratori, Seimei
PY - 2003/8/22
Y1 - 2003/8/22
N2 - Layer-by-layer self-assembled multilayer films were prepared by the alternate deposition of poly(allylamine hydrochloride)(PAH) and poly(acrylic acid)(PAA). DC current-voltage characteristics of Au/(PAH/PAA)150/Au (MIM) sandwich structure devices after the annealing treatment of several temperatures were measured. It was found that the resistivity of the MIM devices drastically increased by annealing at the temperature which is higher than the glass transition temperature (Tg) from the self-assembled multilayer films. We consider that it is very important to remove the moisture from the inside of the self-assembled multilayer films to obtain the higher resistivity. And it was ascertained by Fourier transform infrared radiation spectroscopy measurement that the structural change in the self-assembled multilayer films, which was induced by micro-Brownian motion in the vicinity of the Tg, also affected the higher resistivity.
AB - Layer-by-layer self-assembled multilayer films were prepared by the alternate deposition of poly(allylamine hydrochloride)(PAH) and poly(acrylic acid)(PAA). DC current-voltage characteristics of Au/(PAH/PAA)150/Au (MIM) sandwich structure devices after the annealing treatment of several temperatures were measured. It was found that the resistivity of the MIM devices drastically increased by annealing at the temperature which is higher than the glass transition temperature (Tg) from the self-assembled multilayer films. We consider that it is very important to remove the moisture from the inside of the self-assembled multilayer films to obtain the higher resistivity. And it was ascertained by Fourier transform infrared radiation spectroscopy measurement that the structural change in the self-assembled multilayer films, which was induced by micro-Brownian motion in the vicinity of the Tg, also affected the higher resistivity.
KW - Annealing treatment
KW - Layer-by-layer self-assembled multilayer films
KW - Resistivity
KW - Structural change
UR - http://www.scopus.com/inward/record.url?scp=17944395922&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17944395922&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(03)00786-7
DO - 10.1016/S0040-6090(03)00786-7
M3 - Article
AN - SCOPUS:17944395922
VL - 438-439
SP - 238
EP - 242
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -