TY - GEN
T1 - Evaluation of p-type 4H-SiC piezoresistance coefficients in (0001) plane using numerical simulation
AU - Sugiura, Takaya
AU - Takahashi, Naoki
AU - Nakano, Nobuhiko
N1 - Funding Information:
This work is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc.
Publisher Copyright:
© 2020 Trans Tech Publications Ltd, Switzerland.
PY - 2020
Y1 - 2020
N2 - A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.
AB - A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.
KW - Mechanical stress
KW - Microelectromechanical Systems
KW - Numerical simulation
KW - Piezoresistive effect
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U2 - 10.4028/www.scientific.net/MSF.1004.249
DO - 10.4028/www.scientific.net/MSF.1004.249
M3 - Conference contribution
AN - SCOPUS:85089819254
SN - 9783035715798
T3 - Materials Science Forum
SP - 249
EP - 255
BT - Silicon Carbide and Related Materials 2019
A2 - Yano, Hiroshi
A2 - Ohshima, Takeshi
A2 - Eto, Kazuma
A2 - Mitani, Takeshi
A2 - Harada, Shinsuke
A2 - Tanaka, Yasunori
PB - Trans Tech Publications Ltd
T2 - 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
Y2 - 29 September 2019 through 4 October 2019
ER -