Evaluation of p-type 4H-SiC piezoresistance coefficients in (0001) plane using numerical simulation

Takaya Sugiura, Naoki Takahashi, Nobuhiko Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages249-255
Number of pages7
ISBN (Print)9783035715798
DOIs
Publication statusPublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: 2019 Sep 292019 Oct 4

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
CountryJapan
CityKyoto
Period19/9/2919/10/4

Keywords

  • Mechanical stress
  • Microelectromechanical Systems
  • Numerical simulation
  • Piezoresistive effect

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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