Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography

Kyosuke Muramatsu, Hideaki Asakura, Keijiro Suzuki, Ken Tanizawa, Munehiro Toyama, Minoru Ohtsuka, Nobuyuki Yokoyama, Kazuyuki Matsumaro, Miyoshi Seki, Keiji Koshino, Kazuhiro Ikeda, Shu Namiki, Hitoshi Kawashima, Hiroyuki Tsuda

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The phase errors in 100-GHz spacing, 8-ch, Si-wire arrayedwaveguide gratings (AWG) fabricated by ArF-immersion photolithography were measured by the frequency-domain interference method. To our knowledge, this is the first time phase error measurements in a Si-wire AWG have been performed. By comparing the reconstructed transmission spectrum to the directly measured spectrum, the accuracy of this phase error measurement was confirmed. The average phase error in the AWGs on 6 chips was 0.27π radian, and this value is equivalent to a fluctuation in the effective refractive index of 1.1 × 10−4.

Original languageEnglish
Article number20150019
JournalIEICE Electronics Express
Volume12
Issue number7
DOIs
Publication statusPublished - 2015 Apr 10

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Keywords

  • Phase error measurement
  • Si-wire arrayed-waveguide grating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Muramatsu, K., Asakura, H., Suzuki, K., Tanizawa, K., Toyama, M., Ohtsuka, M., Yokoyama, N., Matsumaro, K., Seki, M., Koshino, K., Ikeda, K., Namiki, S., Kawashima, H., & Tsuda, H. (2015). Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography. IEICE Electronics Express, 12(7), [20150019]. https://doi.org/10.1587/elex.12.20150019