Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium

Kohei M Itoh, J. Muto, W. Walukiewicz, J. Beeman

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.

Original languageEnglish
Pages (from-to)7797-7804
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number12
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

hole distribution
Germanium
nuclear reactions
germanium
Neutrons
Electric fields
Doping (additives)
Impurities
Infrared absorption
Absorption spectroscopy
Linewidth
Infrared spectroscopy
neutron transmutation doping
impurities
Crystals
electric fields
infrared absorption
absorption spectroscopy
purity
quadrupoles

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium. / Itoh, Kohei M; Muto, J.; Walukiewicz, W.; Beeman, J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 12, 01.01.1996, p. 7797-7804.

Research output: Contribution to journalArticle

@article{a169170033574142a4dd219e9718e21a,
title = "Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium",
abstract = "We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.",
author = "Itoh, {Kohei M} and J. Muto and W. Walukiewicz and J. Beeman",
year = "1996",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.53.7797",
language = "English",
volume = "53",
pages = "7797--7804",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium

AU - Itoh, Kohei M

AU - Muto, J.

AU - Walukiewicz, W.

AU - Beeman, J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.

AB - We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.

UR - http://www.scopus.com/inward/record.url?scp=0001424803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001424803&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.53.7797

DO - 10.1103/PhysRevB.53.7797

M3 - Article

AN - SCOPUS:0001424803

VL - 53

SP - 7797

EP - 7804

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

ER -