Abstract
We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.
Original language | English |
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Pages (from-to) | 7797-7804 |
Number of pages | 8 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 53 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics