Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium

K. Itoh, J. Muto, W. Walukiewicz, J. Beeman

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Abstract

We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.

Original languageEnglish
Pages (from-to)7797-7804
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number12
DOIs
Publication statusPublished - 1996 Jan 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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