Abstract
We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.
| Original language | English |
|---|---|
| Pages (from-to) | 7797-7804 |
| Number of pages | 8 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1996 Jan 1 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium. / Itoh, Kohei M; Muto, J.; Walukiewicz, W.; Beeman, J.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 12, 01.01.1996, p. 7797-7804.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium
AU - Itoh, Kohei M
AU - Muto, J.
AU - Walukiewicz, W.
AU - Beeman, J.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.
AB - We report on low-temperature infrared-absorption spectroscopy studies of compensated p-type Ge(Ga, As) samples with varying doping compensation ratios. Previous difficulties in preparing appropriate samples are overcome by neutron-transmutation doping of high-purity, isotopically controlled germanium composed exclusively of (Formula presented) and (Formula presented), viz. (Formula presented). With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87, while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×(Formula presented). The observed excitation lines of Ga acceptors broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric-field gradient. Experimental linewidths are quantitatively compared with existing theories of electric-field broadening developed in the context of donor transitions. We find excellent agreement with the theory based on the correlated distribution of ionized impurity centers.
UR - http://www.scopus.com/inward/record.url?scp=0001424803&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001424803&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.53.7797
DO - 10.1103/PhysRevB.53.7797
M3 - Article
AN - SCOPUS:0001424803
VL - 53
SP - 7797
EP - 7804
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 12
ER -