EXAFS study on MBE grown CuInSe2 thin film

R. Shioda, Y. Okada, H. Oyanagi, S. Niki, P. J. Fons, A. Yamada, Y. Makita

Research output: Contribution to journalArticle

Abstract

The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.

Original languageEnglish
Pages (from-to)X9-187
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume60
Issue number3
Publication statusPublished - 1996 Dec 1
Externally publishedYes

Keywords

  • CuInSe
  • EXAFS

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Shioda, R., Okada, Y., Oyanagi, H., Niki, S., Fons, P. J., Yamada, A., & Makita, Y. (1996). EXAFS study on MBE grown CuInSe2 thin film. Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 60(3), X9-187.