Exchange coupling in silicon double quantum dots

Yoko Hada, Mikio Eto

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An exchange coupling between localized electron spins is evaluated in silicon double quantum dots, taking account of electron-electron interaction exactly. A multivalley structure of conduction band is taken into account within the effective mass approximation. We show that the intervalley tunneling between the quantum dots plays an important role in the exchange coupling. The exchange coupling can be controlled by gating the central electrode of the double quantum dots, which is applicable to two-qubit gate operation for quantum computation using the electron spins.

Original languageEnglish
Pages (from-to)7329-7336
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number10
DOIs
Publication statusPublished - 2004 Oct 1

Keywords

  • Double quantum dot
  • Exchange coupling
  • Multivalley
  • Quantum computation
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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