Exciton dephasing in strain-compensated self-assembled InAs quantum dots

Junko Hayase, Kouichi Akahane, Naokatsu Yamamoto, Mamiko Kujiraoka, Kazuhiro Ema, Masahide Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874 eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time. quantum dot, strain compensation, dephasing, four-wave mixing, population lifetime, optical anisotropy.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6115
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: 2006 Jan 222006 Jan 26

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
CountryUnited States
CitySan Jose, CA
Period06/1/2206/1/26

Fingerprint

Excitons
Semiconductor quantum dots
quantum dots
excitons
Four wave mixing
four-wave mixing
Optical anisotropy
life (durability)
excitation
Photons
interactions
Polarization
anisotropy
photons
decay
polarization
pulses
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hayase, J., Akahane, K., Yamamoto, N., Kujiraoka, M., Ema, K., & Sasaki, M. (2006). Exciton dephasing in strain-compensated self-assembled InAs quantum dots. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6115). [61151O] https://doi.org/10.1117/12.661300

Exciton dephasing in strain-compensated self-assembled InAs quantum dots. / Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Kujiraoka, Mamiko; Ema, Kazuhiro; Sasaki, Masahide.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6115 2006. 61151O.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hayase, J, Akahane, K, Yamamoto, N, Kujiraoka, M, Ema, K & Sasaki, M 2006, Exciton dephasing in strain-compensated self-assembled InAs quantum dots. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6115, 61151O, Physics and Simulation of Optoelectronic Devices XIV, San Jose, CA, United States, 06/1/22. https://doi.org/10.1117/12.661300
Hayase J, Akahane K, Yamamoto N, Kujiraoka M, Ema K, Sasaki M. Exciton dephasing in strain-compensated self-assembled InAs quantum dots. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6115. 2006. 61151O https://doi.org/10.1117/12.661300
Hayase, Junko ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Kujiraoka, Mamiko ; Ema, Kazuhiro ; Sasaki, Masahide. / Exciton dephasing in strain-compensated self-assembled InAs quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6115 2006.
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