Exciton dephasing in strain-compensated self-assembled InAs quantum dots

Junko Ishi-Hayase, Kouichi Akahane, Naokatsu Yamamoto, Mamiko Kujiraoka, Kazuhiro Ema, Masahide Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874 eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time. quantum dot, strain compensation, dephasing, four-wave mixing, population lifetime, optical anisotropy.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
DOIs
Publication statusPublished - 2006 May 22
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: 2006 Jan 222006 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6115
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
CountryUnited States
CitySan Jose, CA
Period06/1/2206/1/26

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Ishi-Hayase, J., Akahane, K., Yamamoto, N., Kujiraoka, M., Ema, K., & Sasaki, M. (2006). Exciton dephasing in strain-compensated self-assembled InAs quantum dots. In Physics and Simulation of Optoelectronic Devices XIV [61151O] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6115). https://doi.org/10.1117/12.661300