Exciton transfer between localized states in ZnO quantum well structures

T. Makino, K. Saito, M. Kawasaki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The dynamics of photocreated excitons in a CdZnO/MgZnO quantum well (QW) was studied by comparing the experimental photoluminescence (PL) data with the results of Monte Carlo simulations of the exciton hopping. The temperature-dependent PL linewidth was found to be in reasonable agreement with the model of exciton hopping, with an additional inhomogeneous broadening (Γ) accounted for. The simulation analysis revealed fluctuations of the band potential to be 20 meV with an additional inhomogeneous broadening of Γ = 29 meV, and a crossover from a non-thermalized to thermalized exciton energy distribution at about 100 K. In addition, a Bose-Einstein distribution like temperature dependence of the exciton energy in the wells was extracted using the data on the PL peak position.

Original languageEnglish
Pages (from-to)206-211
Number of pages6
JournalSuperlattices and Microstructures
Volume42
Issue number1-6
DOIs
Publication statusPublished - 2007 Jul
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
excitons
quantum wells
Photoluminescence
photoluminescence
Linewidth
crossovers
energy distribution
simulation
LDS 751
Temperature
temperature dependence
temperature
energy

Keywords

  • Excitons
  • Monte Carlo method
  • Photoluminescence
  • Simulation
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Exciton transfer between localized states in ZnO quantum well structures. / Makino, T.; Saito, K.; Kawasaki, M.

In: Superlattices and Microstructures, Vol. 42, No. 1-6, 07.2007, p. 206-211.

Research output: Contribution to journalArticle

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