Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Kei Noda, Yasuo Wada, Toru Toyabe

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.

Original languageEnglish
Pages (from-to)3681-3687
Number of pages7
JournalOrganic Electronics: physics, materials, applications
Volume15
Issue number12
DOIs
Publication statusPublished - 2014

Fingerprint

Thin film transistors
numerical analysis
Numerical analysis
electric contacts
Transistors
Electric properties
Hole mobility
transistors
electrical properties
thin films
hole mobility
Thermionic emission
Parameter extraction
Carrier mobility
Charge carriers
Field emission
Semiconductor materials
carrier injection
thermionic emission
Electrodes

Keywords

  • Bottom-gate, bottom-contact configuration
  • Device simulation
  • Organic thin-film transistors
  • Schottky barrier
  • Thermionic field emission

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

@article{82e05a2da4c14fff9212aad1a0f7367e,
title = "Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact",
abstract = "Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.",
keywords = "Bottom-gate, bottom-contact configuration, Device simulation, Organic thin-film transistors, Schottky barrier, Thermionic field emission",
author = "Kei Noda and Yasuo Wada and Toru Toyabe",
year = "2014",
doi = "10.1016/j.orgel.2014.10.017",
language = "English",
volume = "15",
pages = "3681--3687",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "12",

}

TY - JOUR

T1 - Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

AU - Noda, Kei

AU - Wada, Yasuo

AU - Toyabe, Toru

PY - 2014

Y1 - 2014

N2 - Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.

AB - Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.

KW - Bottom-gate, bottom-contact configuration

KW - Device simulation

KW - Organic thin-film transistors

KW - Schottky barrier

KW - Thermionic field emission

UR - http://www.scopus.com/inward/record.url?scp=84911431546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84911431546&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.10.017

DO - 10.1016/j.orgel.2014.10.017

M3 - Article

AN - SCOPUS:84911431546

VL - 15

SP - 3681

EP - 3687

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 12

ER -