Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures

Masaki Omiya, Kozo Koiwa, Nobuyuki Shishido, Shoji Kamiya, Chuantong Chen, Hisashi Sato, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The local interfacial strength is a key factor in designing and fabricating advanced three-dimensional large-scale integration interconnect structures. In this paper, both local fracture tests and three-dimensional elastic-plastic crack propagation analysis for a 10 μm × 10 μm specimen were performed, and the local interfacial adhesion between a Cu interconnect and a SiN cap layer were evaluated. The three-dimensional elastic-plastic crack propagation simulation was developed to evaluate the interfacial adhesion that eliminated the effect of progressive plastic dissipation energy during crack propagation. The results show that the average interfacial adhesion for Cu/SiN is 4.46 ± 0.17 J/m2. The crack propagation behavior and fracture pattern depend on the interfacial adhesion, and these differences are due to the plastic yielding of the side edge of the specimen. The critical interfacial adhesion for the onset of shear fracture is 4.92 J/m2, which is the upper bound of the interfacial adhesion evaluation for the 10 μm × 10 μm specimen.

Original languageEnglish
Pages (from-to)612-621
Number of pages10
JournalMicroelectronics Reliability
Volume53
Issue number4
DOIs
Publication statusPublished - 2013 Apr 1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Omiya, M., Koiwa, K., Shishido, N., Kamiya, S., Chen, C., Sato, H., Nishida, M., Suzuki, T., Nakamura, T., Suzuki, T., & Nokuo, T. (2013). Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures. Microelectronics Reliability, 53(4), 612-621. https://doi.org/10.1016/j.microrel.2012.12.009