Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin-Film Transistors

Ryo Yamamoto, Kei Noda, Yasuo Wada, Toru Toyabe

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Contact doping effects in p-channel dinaphthothienothiphene (DNTT) thin-film transistors with a bottom-gate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current–voltage characteristics by using a hole concentration of the active DNTT layer in the order of 1017 cm−3, which was estimated by capacitance–voltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors.

Original languageEnglish
Pages (from-to)61-68
Number of pages8
JournalElectronics and Communications in Japan
Volume100
Issue number12
DOIs
Publication statusPublished - 2017 Dec

Keywords

  • carrier concentration
  • contact doping
  • device simulation
  • dinaphthothienothiphene (DNTT)
  • organic thin-film transistors

ASJC Scopus subject areas

  • Signal Processing
  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Applied Mathematics

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