Experimental evaluation of coulomb-scattering-limited inversion-layer mobility of n-type metal-oxide-semiconductor field-effect transistors on Si(100), (110), and (111)-surfaces: Impact of correlation between conductivity mass and normal mass

Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida, Shinichi Takagi

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    Abstract

    The inversion-layer electron mobility limited by Coulomb scattering due to interface states (μit) and substrate impurities (μsub) are experimentally evaluated on Si n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) at the surfaces of Si(100), (110), and (111). The inversionlayer mobility is measured by the split C-V method and μit and μsub are extracted using Matthiessen's rule. μit exhibits almost the same behavior irrespective of the different surface orientations, while μsub has the surface orientation dependence. The very weak surface orientation dependence of μit are due to the correlation between the inversion layer thickness (Zave) determined by the normal mass (mz) and the weighed average value of conductivity mass (mc-ave) under multi valley occupation. The surface orientation dependence of μsub is basically explained by the mc ave difference.

    Original languageEnglish
    Article number04DC21
    JournalJapanese journal of applied physics
    Volume49
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2010 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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