Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

H. Majima, Hiroki Ishikuro, T. Hiramoto

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

This letter describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFET's. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFET's whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes account of quantum confinement in silicon narrow channel, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.

Original languageEnglish
Pages (from-to)396-398
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number8
DOIs
Publication statusPublished - 2000 Aug
Externally publishedYes

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Threshold voltage
Quantum confinement
Silicon
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's. / Majima, H.; Ishikuro, Hiroki; Hiramoto, T.

In: IEEE Electron Device Letters, Vol. 21, No. 8, 08.2000, p. 396-398.

Research output: Contribution to journalArticle

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