This letter describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFET's. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFET's whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes account of quantum confinement in silicon narrow channel, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2000 Aug|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering