Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass

H. Hosono, Y. Abe, H. Imagawa, H. Imai, K. Arai

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Abstract

We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.

Original languageEnglish
Pages (from-to)12043-12045
Number of pages3
JournalPhysical Review B
Volume44
Issue number21
DOIs
Publication statusPublished - 1991 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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