Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

Teruyuki Ohashi, Tsunaki Takahashi, Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Deformation potential (D ac), which determines the strength of electron-phonon scattering, is one of the most important physical parameters of Si. A longstanding unresolved question in D ac is that D ac for MOSFETs is considered to be much greater than D ac for bulk Si. In this work, we have demonstrated for the first time that D ac increases sharply at MOS interfaces within several-nm range. Because of the enhanced D ac at MOS interface, D ac for nanoscale SOI channel is expected to be increased owing to the high surface-to-volume ratio, which is verified by electron mobility calculations in extremely-thin SOI (ETSOI) MOSFETs and experimental stress-induced mobility enhancement in nanoscale SOI.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

Fingerprint

Phonon scattering
Electron scattering
Electron mobility
SOI (semiconductors)
Field effect transistors
field effect transistors
electron mobility
augmentation
scattering
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Ohashi, T., Takahashi, T., Beppu, N., Oda, S., & Uchida, K. (2011). Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. In Technical Digest - International Electron Devices Meeting, IEDM [6131566] https://doi.org/10.1109/IEDM.2011.6131566

Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. / Ohashi, Teruyuki; Takahashi, Tsunaki; Beppu, Nobuyasu; Oda, Shunri; Uchida, Ken.

Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131566.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohashi, T, Takahashi, T, Beppu, N, Oda, S & Uchida, K 2011, Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. in Technical Digest - International Electron Devices Meeting, IEDM., 6131566, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131566
Ohashi T, Takahashi T, Beppu N, Oda S, Uchida K. Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. In Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131566 https://doi.org/10.1109/IEDM.2011.6131566
Ohashi, Teruyuki ; Takahashi, Tsunaki ; Beppu, Nobuyasu ; Oda, Shunri ; Uchida, Ken. / Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
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