Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

Teruyuki Ohashi, Tsunaki Takahashi, Nobuyasu Beppu, Shunri Oda, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    7 Citations (Scopus)

    Abstract

    Deformation potential (D ac), which determines the strength of electron-phonon scattering, is one of the most important physical parameters of Si. A longstanding unresolved question in D ac is that D ac for MOSFETs is considered to be much greater than D ac for bulk Si. In this work, we have demonstrated for the first time that D ac increases sharply at MOS interfaces within several-nm range. Because of the enhanced D ac at MOS interface, D ac for nanoscale SOI channel is expected to be increased owing to the high surface-to-volume ratio, which is verified by electron mobility calculations in extremely-thin SOI (ETSOI) MOSFETs and experimental stress-induced mobility enhancement in nanoscale SOI.

    Original languageEnglish
    Title of host publication2011 International Electron Devices Meeting, IEDM 2011
    Pages16.4.1-16.4.4
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    Duration: 2011 Dec 52011 Dec 7

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2011 IEEE International Electron Devices Meeting, IEDM 2011
    CountryUnited States
    CityWashington, DC
    Period11/12/511/12/7

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Ohashi, T., Takahashi, T., Beppu, N., Oda, S., & Uchida, K. (2011). Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 16.4.1-16.4.4). [6131566] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131566