Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

Teruyuki Ohashi; Tsunaki Takahashi; Nobuyasu Beppu; Shunri Oda; Ken Uchida

doi:10.1109/IEDM.2011.6131566

Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

Teruyuki Ohashi, Tsunaki Takahashi, Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Deformation potential (D _ac), which determines the strength of electron-phonon scattering, is one of the most important physical parameters of Si. A longstanding unresolved question in D _ac is that D _ac for MOSFETs is considered to be much greater than D _ac for bulk Si. In this work, we have demonstrated for the first time that D _ac increases sharply at MOS interfaces within several-nm range. Because of the enhanced D _ac at MOS interface, D _ac for nanoscale SOI channel is expected to be increased owing to the high surface-to-volume ratio, which is verified by electron mobility calculations in extremely-thin SOI (ETSOI) MOSFETs and experimental stress-induced mobility enhancement in nanoscale SOI.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	16.4.1-16.4.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131566
Publication status	Published - 2011 Dec 1
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131566

Cite this

Ohashi, T., Takahashi, T., Beppu, N., Oda, S., & Uchida, K. (2011). Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 16.4.1-16.4.4). [6131566] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131566

Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. / Ohashi, Teruyuki; Takahashi, Tsunaki; Beppu, Nobuyasu et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 16.4.1-16.4.4 6131566 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohashi, T, Takahashi, T, Beppu, N, Oda, S & Uchida, K 2011, Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs. in 2011 International Electron Devices Meeting, IEDM 2011., 6131566, Technical Digest - International Electron Devices Meeting, IEDM, pp. 16.4.1-16.4.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131566

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abstract = "Deformation potential (D ac), which determines the strength of electron-phonon scattering, is one of the most important physical parameters of Si. A longstanding unresolved question in D ac is that D ac for MOSFETs is considered to be much greater than D ac for bulk Si. In this work, we have demonstrated for the first time that D ac increases sharply at MOS interfaces within several-nm range. Because of the enhanced D ac at MOS interface, D ac for nanoscale SOI channel is expected to be increased owing to the high surface-to-volume ratio, which is verified by electron mobility calculations in extremely-thin SOI (ETSOI) MOSFETs and experimental stress-induced mobility enhancement in nanoscale SOI.",

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AB - Deformation potential (D ac), which determines the strength of electron-phonon scattering, is one of the most important physical parameters of Si. A longstanding unresolved question in D ac is that D ac for MOSFETs is considered to be much greater than D ac for bulk Si. In this work, we have demonstrated for the first time that D ac increases sharply at MOS interfaces within several-nm range. Because of the enhanced D ac at MOS interface, D ac for nanoscale SOI channel is expected to be increased owing to the high surface-to-volume ratio, which is verified by electron mobility calculations in extremely-thin SOI (ETSOI) MOSFETs and experimental stress-induced mobility enhancement in nanoscale SOI.

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Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

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