Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Ken Uchida; Junji Koga; Ryuji Ohba; Toshinori Numata; Shin ichi Takagi

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Ken Uchida, Junji Koga, Ryuji Ohba, Toshinori Numata, Shin ichi Takagi

Research output: Contribution to journal › Conference article

Abstract

The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness T_SOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as T_SOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as T_SOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

Original language	English
Pages (from-to)	633-636
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Dec 1
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

Fingerprint Dive into the research topics of 'Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs'. Together they form a unique fingerprint.

Cite this

Uchida, K., Koga, J., Ohba, R., Numata, T., & Takagi, S. I. (2001). Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. Technical Digest - International Electron Devices Meeting, 633-636.

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. / Uchida, Ken; Koga, Junji; Ohba, Ryuji; Numata, Toshinori; Takagi, Shin ichi.

In: Technical Digest - International Electron Devices Meeting, 01.12.2001, p. 633-636.

Research output: Contribution to journal › Conference article

@article{52c9ab3f643d4ec082bcf32d222446d9,

title = "Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs",

abstract = "The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.",

author = "Ken Uchida and Junji Koga and Ryuji Ohba and Toshinori Numata and Takagi, {Shin ichi}",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "633--636",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

AU - Uchida, Ken

AU - Koga, Junji

AU - Ohba, Ryuji

AU - Numata, Toshinori

AU - Takagi, Shin ichi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

AB - The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

UR - http://www.scopus.com/inward/record.url?scp=0035716644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035716644&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035716644

SP - 633

EP - 636

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -