Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Ken Uchida, Junji Koga, Ryuji Ohba, Toshinori Numata, Shin ichi Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

62 Citations (Scopus)

Abstract

The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages633-636
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

Other

OtherIEEE International Electron Devices Meeting IEDM 2001
CountryUnited States
CityWashington, DC
Period01/12/201/12/5

Fingerprint

Threshold voltage
Capacitance
Inversion layers
Electron energy levels
Degradation
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Uchida, K., Koga, J., Ohba, R., Numata, T., & Takagi, S. I. (2001). Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. In Technical Digest - International Electron Devices Meeting (pp. 633-636)

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. / Uchida, Ken; Koga, Junji; Ohba, Ryuji; Numata, Toshinori; Takagi, Shin ichi.

Technical Digest - International Electron Devices Meeting. 2001. p. 633-636.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Koga, J, Ohba, R, Numata, T & Takagi, SI 2001, Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. in Technical Digest - International Electron Devices Meeting. pp. 633-636, IEEE International Electron Devices Meeting IEDM 2001, Washington, DC, United States, 01/12/2.
Uchida K, Koga J, Ohba R, Numata T, Takagi SI. Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. In Technical Digest - International Electron Devices Meeting. 2001. p. 633-636
Uchida, Ken ; Koga, Junji ; Ohba, Ryuji ; Numata, Toshinori ; Takagi, Shin ichi. / Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. Technical Digest - International Electron Devices Meeting. 2001. pp. 633-636
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