Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Ken Uchida, Junji Koga, Ryuji Ohba, Toshinori Numata, Shin ichi Takagi

    Research output: Contribution to journalConference article

    63 Citations (Scopus)

    Abstract

    The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

    Original languageEnglish
    Pages (from-to)633-636
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 2001 Dec 1
    EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
    Duration: 2001 Dec 22001 Dec 5

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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