Abstract
The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Pages | 633-636 |
| Number of pages | 4 |
| Publication status | Published - 2001 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5 |
Other
| Other | IEEE International Electron Devices Meeting IEDM 2001 |
|---|---|
| Country | United States |
| City | Washington, DC |
| Period | 01/12/2 → 01/12/5 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs. / Uchida, Ken; Koga, Junji; Ohba, Ryuji; Numata, Toshinori; Takagi, Shin ichi.
Technical Digest - International Electron Devices Meeting. 2001. p. 633-636.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs
AU - Uchida, Ken
AU - Koga, Junji
AU - Ohba, Ryuji
AU - Numata, Toshinori
AU - Takagi, Shin ichi
PY - 2001
Y1 - 2001
N2 - The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.
AB - The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.
UR - http://www.scopus.com/inward/record.url?scp=0035716644&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035716644&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0035716644
SP - 633
EP - 636
BT - Technical Digest - International Electron Devices Meeting
ER -