TY - JOUR
T1 - Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots
AU - Ogi, Jun
AU - Ferrus, Thierry
AU - Kodera, Tetsuo
AU - Tsuchiya, Yoshishige
AU - Uchida, Ken
AU - Williams, David A.
AU - Oda, Shunri
AU - Mizuta, Hiroshi
PY - 2010/4
Y1 - 2010/4
N2 - Silicon-based suspended double quantum dots (SDQDs) were fabricated to study and control the strength of the electron-phonon interaction. A distinctive and large inelastic tunneling was observed in single-electron transport measurement and well explained by the emission of phonons that interact strongly with electrons owing to the phonon modulation in the suspended film. The first time observation of the enhancement of the electron-phonon interaction in Si SDQDs as well as the good agreement between the experimental results and the theoretical simulations are encouraging preliminary results that allow us to envision the observation of the tailoring of the electron-phonon interaction in SDQDs.
AB - Silicon-based suspended double quantum dots (SDQDs) were fabricated to study and control the strength of the electron-phonon interaction. A distinctive and large inelastic tunneling was observed in single-electron transport measurement and well explained by the emission of phonons that interact strongly with electrons owing to the phonon modulation in the suspended film. The first time observation of the enhancement of the electron-phonon interaction in Si SDQDs as well as the good agreement between the experimental results and the theoretical simulations are encouraging preliminary results that allow us to envision the observation of the tailoring of the electron-phonon interaction in SDQDs.
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U2 - 10.1143/JJAP.49.045203
DO - 10.1143/JJAP.49.045203
M3 - Article
AN - SCOPUS:77952609244
SN - 0021-4922
VL - 49
SP - 452031
EP - 452035
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 PART 1
ER -