Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

Ken Uchida, Ricardo Zednik, Ching Huang Lu, Hemanth Jagannathan, James McVittie, Paul C. McIntyre, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

73 Citations (Scopus)

Abstract

The biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body (UTB) SOI MOSFET with T SOI of less than 5nm were investigated. It was demonstrated that in bulk nMOSFETs, electron mobility enhancement is stronger in the order of biaxial tensile, <100> uniaxial tensile, and <100> uniaxial tensile strains. In bulk pMOSFET, hole mobility is stronger in the order of <110> uniaxial compressive, <100> uniaxial compressive, and biaxial tensile strains. It was shown that the uniaxial strain is effective to enhance both electron and hole mobility in UTB MOSFETs with T SOI of down to at least 2.5nm. The subband structure engineering in UTB MOSFETs can cooperate with strain engineering to enhance mobility.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages229-232
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

Other

OtherIEEE International Electron Devices Meeting, 2004 IEDM
CountryUnited States
CitySan Francisco, CA
Period04/12/1304/12/15

Fingerprint

Carrier mobility
Hole mobility
Tensile strain
Electron mobility

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uchida, K., Zednik, R., Lu, C. H., Jagannathan, H., McVittie, J., McIntyre, P. C., & Nishi, Y. (2004). Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 229-232)

Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. / Uchida, Ken; Zednik, Ricardo; Lu, Ching Huang; Jagannathan, Hemanth; McVittie, James; McIntyre, Paul C.; Nishi, Yoshio.

Technical Digest - International Electron Devices Meeting, IEDM. 2004. p. 229-232.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Zednik, R, Lu, CH, Jagannathan, H, McVittie, J, McIntyre, PC & Nishi, Y 2004, Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. in Technical Digest - International Electron Devices Meeting, IEDM. pp. 229-232, IEEE International Electron Devices Meeting, 2004 IEDM, San Francisco, CA, United States, 04/12/13.
Uchida K, Zednik R, Lu CH, Jagannathan H, McVittie J, McIntyre PC et al. Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. In Technical Digest - International Electron Devices Meeting, IEDM. 2004. p. 229-232
Uchida, Ken ; Zednik, Ricardo ; Lu, Ching Huang ; Jagannathan, Hemanth ; McVittie, James ; McIntyre, Paul C. ; Nishi, Yoshio. / Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM. 2004. pp. 229-232
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