Abstract
The biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body (UTB) SOI MOSFET with T SOI of less than 5nm were investigated. It was demonstrated that in bulk nMOSFETs, electron mobility enhancement is stronger in the order of biaxial tensile, <100> uniaxial tensile, and <100> uniaxial tensile strains. In bulk pMOSFET, hole mobility is stronger in the order of <110> uniaxial compressive, <100> uniaxial compressive, and biaxial tensile strains. It was shown that the uniaxial strain is effective to enhance both electron and hole mobility in UTB MOSFETs with T SOI of down to at least 2.5nm. The subband structure engineering in UTB MOSFETs can cooperate with strain engineering to enhance mobility.
| Original language | English |
|---|---|
| Pages (from-to) | 229-232 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry