Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

Ken Uchida, Ricardo Zednik, Ching Huang Lu, Hemanth Jagannathan, James McVittie, Paul C. McIntyre, Yoshio Nishi

Research output: Contribution to journalConference article

73 Citations (Scopus)

Abstract

The biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body (UTB) SOI MOSFET with T SOI of less than 5nm were investigated. It was demonstrated that in bulk nMOSFETs, electron mobility enhancement is stronger in the order of biaxial tensile, <100> uniaxial tensile, and <100> uniaxial tensile strains. In bulk pMOSFET, hole mobility is stronger in the order of <110> uniaxial compressive, <100> uniaxial compressive, and biaxial tensile strains. It was shown that the uniaxial strain is effective to enhance both electron and hole mobility in UTB MOSFETs with T SOI of down to at least 2.5nm. The subband structure engineering in UTB MOSFETs can cooperate with strain engineering to enhance mobility.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004 Dec 1
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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