Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

Nobuyasu Beppu, Shunri Oda, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    18 Citations (Scopus)

    Abstract

    In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.

    Original languageEnglish
    Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
    Pages28.2.1-28.2.4
    DOIs
    Publication statusPublished - 2012 Dec 1
    Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
    Duration: 2012 Dec 102012 Dec 13

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2012 IEEE International Electron Devices Meeting, IEDM 2012
    CountryUnited States
    CitySan Francisco, CA
    Period12/12/1012/12/13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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