Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

Nobuyasu Beppu; Shunri Oda; Ken Uchida

doi:10.1109/IEDM.2012.6479120

Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

23 Citations (Scopus)

Abstract

In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	28.2.1-28.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479120
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 2012 Dec 10 → 2012 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/12/10 → 12/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2012.6479120

Cite this

Beppu, N., Oda, S., & Uchida, K. (2012). Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 28.2.1-28.2.4). [6479120] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479120

Experimental study of self-heating effect (SHE) in SOI MOSFETs : Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. / Beppu, Nobuyasu; Oda, Shunri; Uchida, Ken.

2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 28.2.1-28.2.4 6479120 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Beppu, N, Oda, S & Uchida, K 2012, Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479120, Technical Digest - International Electron Devices Meeting, IEDM, pp. 28.2.1-28.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/12/10. https://doi.org/10.1109/IEDM.2012.6479120

Beppu N, Oda S, Uchida K. Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. In 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 28.2.1-28.2.4. 6479120. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2012.6479120

Beppu, Nobuyasu ; Oda, Shunri ; Uchida, Ken. / Experimental study of self-heating effect (SHE) in SOI MOSFETs : Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. pp. 28.2.1-28.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{f2f08b1d109a41918e5e1846904b585d,

title = "Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV",

abstract = "In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.",

author = "Nobuyasu Beppu and Shunri Oda and Ken Uchida",

year = "2012",

doi = "10.1109/IEDM.2012.6479120",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "28.2.1--28.2.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

TY - GEN

T1 - Experimental study of self-heating effect (SHE) in SOI MOSFETs

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

AU - Beppu, Nobuyasu

AU - Oda, Shunri

AU - Uchida, Ken

PY - 2012

Y1 - 2012

N2 - In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.

AB - In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.

UR - http://www.scopus.com/inward/record.url?scp=84876144412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876144412&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6479120

DO - 10.1109/IEDM.2012.6479120

M3 - Conference contribution

AN - SCOPUS:84876144412

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 28.2.1-28.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

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