Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons

Aya Shindome; Yu Doioka; Nobuyasu Beppu; Shunri Oda; Ken Uchida

doi:10.7567/JJAP.52.04CN05

Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons

Aya Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.

Original language	English
Article number	04CN05
Journal	Japanese journal of applied physics
Volume	52
Issue number	4 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.04CN05
Publication status	Published - 2013 Apr 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons",

abstract = "Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.",

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AU - Shindome, Aya

AU - Doioka, Yu

AU - Beppu, Nobuyasu

AU - Oda, Shunri

AU - Uchida, Ken

PY - 2013/4/1

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AB - Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.

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