Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons

Aya Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.

Original languageEnglish
Article number04CN05
JournalJapanese Journal of Applied Physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr

Fingerprint

Nanoribbons
random access memory
Graphene
Monolayers
graphene
Multilayers
Data storage equipment
large scale integration
Electron energy loss spectroscopy
Scalability
Atomic force microscopy
energy dissipation
atomic force microscopy
electron energy
Transmission electron microscopy
scaling
transmission electron microscopy
Metals
metals
spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons. / Shindome, Aya; Doioka, Yu; Beppu, Nobuyasu; Oda, Shunri; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CN05, 04.2013.

Research output: Contribution to journalArticle

Shindome, Aya ; Doioka, Yu ; Beppu, Nobuyasu ; Oda, Shunri ; Uchida, Ken. / Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 4 PART 2.
@article{813ca5640daf4eb490768e985be5abf6,
title = "Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons",
abstract = "Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.",
author = "Aya Shindome and Yu Doioka and Nobuyasu Beppu and Shunri Oda and Ken Uchida",
year = "2013",
month = "4",
doi = "10.7567/JJAP.52.04CN05",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons

AU - Shindome, Aya

AU - Doioka, Yu

AU - Beppu, Nobuyasu

AU - Oda, Shunri

AU - Uchida, Ken

PY - 2013/4

Y1 - 2013/4

N2 - Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.

AB - Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.

UR - http://www.scopus.com/inward/record.url?scp=84880790358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880790358&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.04CN05

DO - 10.7567/JJAP.52.04CN05

M3 - Article

AN - SCOPUS:84880790358

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04CN05

ER -