Abstract
Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.
| Original language | English |
|---|---|
| Article number | 04CN05 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2013 Apr |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons. / Shindome, Aya; Doioka, Yu; Beppu, Nobuyasu; Oda, Shunri; Uchida, Ken.
In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CN05, 04.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Experimental study of two-terminal resistive random access memory realized in mono- and multilayer exfoliated graphene nanoribbons
AU - Shindome, Aya
AU - Doioka, Yu
AU - Beppu, Nobuyasu
AU - Oda, Shunri
AU - Uchida, Ken
PY - 2013/4
Y1 - 2013/4
N2 - Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.
AB - Two-terminal mono- and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene.
UR - http://www.scopus.com/inward/record.url?scp=84880790358&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880790358&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.04CN05
DO - 10.7567/JJAP.52.04CN05
M3 - Article
AN - SCOPUS:84880790358
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04CN05
ER -