Experimental study of uniaxial stress effects on Coulomb-limited mobility in p -type metal-oxide-semiconductor field-effect transistors

Shigeki Kobayashi, Masumi Saitoh, Yukio Nakabayashi, Ken Uchida

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Uniaxial stress effects on Coulomb-limited mobility (μCoulomb) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated experimentally. By using the four-point bending method, uniaxial stress corresponding to 0.1% strain is applied to MOSFETs along the channel direction. It is found that μCoulomb in p -type MOSFETs is enhanced greatly by uniaxial stress; μCoulomb is as sensitive as phonon-limited mobility. The high sensitivity of μCoulomb in p -type MOSFETs to stress arises from the stress-induced change of hole effective mass.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
Publication statusPublished - 2007
Externally publishedYes

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p-type semiconductors
metal oxide semiconductors
field effect transistors
sensitivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Experimental study of uniaxial stress effects on Coulomb-limited mobility in p -type metal-oxide-semiconductor field-effect transistors. / Kobayashi, Shigeki; Saitoh, Masumi; Nakabayashi, Yukio; Uchida, Ken.

In: Applied Physics Letters, Vol. 91, No. 20, 203506, 2007.

Research output: Contribution to journalArticle

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