Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin Ichi Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

242 Citations (Scopus)

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages47-50
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

Other

Other2002 IEEE International Devices Meeting (IEDM)
CountryUnited States
CitySan Francisco, CA
Period02/12/802/12/11

Fingerprint

Carrier transport
Electron mobility
Carrier mobility
Threshold voltage
Capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Uchida, K., Watanabe, H., Kinoshita, A., Koga, J., Numata, T., & Takagi, S. I. (2002). Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm. In Technical Digest - International Electron Devices Meeting (pp. 47-50)

Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm. / Uchida, Ken; Watanabe, Hiroshi; Kinoshita, Atsuhiro; Koga, Junji; Numata, Toshinori; Takagi, Shin Ichi.

Technical Digest - International Electron Devices Meeting. 2002. p. 47-50.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Watanabe, H, Kinoshita, A, Koga, J, Numata, T & Takagi, SI 2002, Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm. in Technical Digest - International Electron Devices Meeting. pp. 47-50, 2002 IEEE International Devices Meeting (IEDM), San Francisco, CA, United States, 02/12/8.
Uchida K, Watanabe H, Kinoshita A, Koga J, Numata T, Takagi SI. Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm. In Technical Digest - International Electron Devices Meeting. 2002. p. 47-50
Uchida, Ken ; Watanabe, Hiroshi ; Kinoshita, Atsuhiro ; Koga, Junji ; Numata, Toshinori ; Takagi, Shin Ichi. / Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm. Technical Digest - International Electron Devices Meeting. 2002. pp. 47-50
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