Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida; Hiroshi Watanabe; Atsuhiro Kinoshita; Junji Koga; Toshinori Numata; Shin Ichi Takagi

Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin Ichi Takagi

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Original language	English
Pages (from-to)	47-50
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002 Dec 1
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm",

abstract = "The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.",

author = "Ken Uchida and Hiroshi Watanabe and Atsuhiro Kinoshita and Junji Koga and Toshinori Numata and Takagi, {Shin Ichi}",

year = "2002",

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language = "English",

pages = "47--50",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

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TY - JOUR

T1 - Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

AU - Uchida, Ken

AU - Watanabe, Hiroshi

AU - Kinoshita, Atsuhiro

AU - Koga, Junji

AU - Numata, Toshinori

AU - Takagi, Shin Ichi

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

AB - The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

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M3 - Conference article

AN - SCOPUS:0036927506

SN - 0163-1918

SP - 47

EP - 50

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Abstract

ASJC Scopus subject areas

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