Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

K. Uchida, H. Watanabe, J. Koga, A. Kinoshita, S. Takagi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    15 Citations (Scopus)

    Abstract

    The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, TSOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as TSOI decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

    Original languageEnglish
    Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages8-13
    Number of pages6
    ISBN (Electronic)0780378261
    DOIs
    Publication statusPublished - 2003 Jan 1
    Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
    Duration: 2003 Sep 32003 Sep 5

    Publication series

    NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Volume2003-January

    Other

    Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
    CountryUnited States
    CityBoston
    Period03/9/303/9/5

    Keywords

    • CMOSFETs
    • Electric variables
    • Electron mobility
    • Fluctuations
    • MOSFET circuits
    • Particle scattering
    • Raman scattering
    • Residual stresses
    • Semiconductor films
    • Threshold voltage

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

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  • Cite this

    Uchida, K., Watanabe, H., Koga, J., Kinoshita, A., & Takagi, S. (2003). Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 8-13). [1233625] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233625