Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

Ken Uchida, H. Watanabe, J. Koga, A. Kinoshita, S. Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, TSOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as TSOI decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8-13
Number of pages6
Volume2003-January
ISBN (Print)0780378261
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: 2003 Sep 32003 Sep 5

Other

Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
CountryUnited States
CityBoston
Period03/9/303/9/5

Fingerprint

Hole mobility
MOSFET
Carrier transport
Electron mobility
Carrier mobility
Threshold voltage
Experimental Study
Capacitance
Decrease
Voltage
Electron
Fluctuations
Range of data

Keywords

  • CMOSFETs
  • Electric variables
  • Electron mobility
  • Fluctuations
  • MOSFET circuits
  • Particle scattering
  • Raman scattering
  • Residual stresses
  • Semiconductor films
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Uchida, K., Watanabe, H., Koga, J., Kinoshita, A., & Takagi, S. (2003). Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (Vol. 2003-January, pp. 8-13). [1233625] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233625

Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. / Uchida, Ken; Watanabe, H.; Koga, J.; Kinoshita, A.; Takagi, S.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 8-13 1233625.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Watanabe, H, Koga, J, Kinoshita, A & Takagi, S 2003, Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. vol. 2003-January, 1233625, Institute of Electrical and Electronics Engineers Inc., pp. 8-13, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 03/9/3. https://doi.org/10.1109/SISPAD.2003.1233625
Uchida K, Watanabe H, Koga J, Kinoshita A, Takagi S. Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 8-13. 1233625 https://doi.org/10.1109/SISPAD.2003.1233625
Uchida, Ken ; Watanabe, H. ; Koga, J. ; Kinoshita, A. ; Takagi, S. / Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 8-13
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