Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin Ichi Takagi

    Research output: Contribution to journalConference article

    248 Citations (Scopus)

    Abstract

    The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

    Original languageEnglish
    Pages (from-to)47-50
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 2002 Dec 1
    Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
    Duration: 2002 Dec 82002 Dec 11

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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