Abstract
The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 805-808 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry