Experimental study on electron mobility in accumulation-mode silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Naotoshi Kadotani, Teruyuki Ohashi, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Junctionless, or accumulation-mode, metal-oxide-semiconductor field-effect transistors (MOSFETs), where the channel and source/drain doping types are the same, have attracted growing interests because of their simpler fabrication processes. However, carrier transport properties, in particular, mobility characteristics, in the junctionless silicon-on-insulator (SOI) MOSFETs have been less studied. Although higher mobility in accumulation-mode SOI MOSFETs has been reported, the physical mechanisms of the higher mobility have not yet been clarified. In this work, the physical mechanisms of higher mobility in accumulation-mode MOSFETs have been investigated. We fabricated junctionless SOI MOSFETs with a channel doping concentration of 1 ×1017 cm -3 and an SOI body thickness of 48nm whose mobility is greater than the bulk universal mobility in spite of the high doping concentration in the channel. The drain current consists of two components: one in the accumulation layer and the other in the SOI body. The mobility of each component is evaluated separately. As a result, it is revealed that the total mobility is the weighted mean of the two mobility components, where carrier concentration is the weight.

Original languageEnglish
Article number094101
JournalJapanese Journal of Applied Physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - 2011 Sep
Externally publishedYes

Fingerprint

Electron mobility
MOSFET devices
electron mobility
metal oxide semiconductors
field effect transistors
insulators
Silicon
silicon
Doping (additives)
Carrier transport
Drain current
Transport properties
Carrier concentration
Fabrication
transport properties
fabrication

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Experimental study on electron mobility in accumulation-mode silicon-on-insulator metal-oxide-semiconductor field-effect transistors. / Kadotani, Naotoshi; Ohashi, Teruyuki; Takahashi, Tsunaki; Oda, Shunri; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 50, No. 9 PART 1, 094101, 09.2011.

Research output: Contribution to journalArticle

Kadotani, Naotoshi ; Ohashi, Teruyuki ; Takahashi, Tsunaki ; Oda, Shunri ; Uchida, Ken. / Experimental study on electron mobility in accumulation-mode silicon-on-insulator metal-oxide-semiconductor field-effect transistors. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 9 PART 1.
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