Experimental study on SET/RESET conditions for graphene resistive random access memory

Aya Shindome, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SETconditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V.

Original languageEnglish
Article number04EN02
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014

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random access memory
Graphene
graphene
Data storage equipment
Interfaces (computer)
time dependence
Electric potential
electric potential
Metals
metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Experimental study on SET/RESET conditions for graphene resistive random access memory. / Shindome, Aya; Takahashi, Tsunaki; Oda, Shunri; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EN02, 2014.

Research output: Contribution to journalArticle

Shindome, Aya ; Takahashi, Tsunaki ; Oda, Shunri ; Uchida, Ken. / Experimental study on SET/RESET conditions for graphene resistive random access memory. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 4 SPEC. ISSUE.
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