Experimental study on subband structures and hole transport in (110) Si p -type metal-oxide-semiconductor field-effect transistors under high magnetic field

Tsunaki Takahashi, Tetsuo Kodera, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The band structures and carrier transport in p -type metal-oxide- semiconductor field-effect transistors (pMOSFETs) fabricated on (110) Si bulk wafers are thoroughly studied over a wide temperature range under high magnetic fields. The sheet conductance, G, versus gate voltage, Vg, characteristics at the temperature of 2 K under the magnetic field of greater than 4 T show clear Shubnikov-de Haas (SdH) oscillations. We observed two types of the SdH oscillations: the shorter-period oscillations at lower gate voltages and the longer-period oscillations at higher gate voltages. The observation of the two types of oscillations indicates that the degenerated hole bands in bulk Si are split into the higher energy band (H band) and the lower energy band (L band) in (110) pMOSFETs. We demonstrated that the L band has higher hole mobility, μh, and lighter density-of-state mass, mDOS, than those of the H band. The energy split between the two bands, Δ E, is experimentally evaluated to be as large as 38 meV at the surface hole density of 4× 1012 cm-2. Since the μh of the H band is lower, the increase of the occupancy in the H band with an increase in Vg leads to the low-temperature local G minimum in G-Vg characteristics. The higher μh in the L band and the large L -band occupancy due to the large ΔE contribute to the excellent performance of (110) pMOSFETs. However, because finite holes still populate in the H band, it is important to minimize the H -band contribution for the improvement of the performance of (110) pMOSFETs.

Original languageEnglish
Article number034505
JournalJournal of Applied Physics
Volume109
Issue number3
DOIs
Publication statusPublished - 2011 Feb 1
Externally publishedYes

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p-type semiconductors
metal oxide semiconductors
energy bands
field effect transistors
magnetic fields
oscillations
electric potential
hole mobility
ultrahigh frequencies
wafers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Experimental study on subband structures and hole transport in (110) Si p -type metal-oxide-semiconductor field-effect transistors under high magnetic field. / Takahashi, Tsunaki; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken.

In: Journal of Applied Physics, Vol. 109, No. 3, 034505, 01.02.2011.

Research output: Contribution to journalArticle

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