Extending the FETs: Challenges and opportunities for new materials and structures

K. Uchida, T. Takahashi

Research output: Contribution to journalConference article

Abstract

Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.

Original languageEnglish
Pages (from-to)3-11
Number of pages9
JournalECS Transactions
Volume64
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

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ASJC Scopus subject areas

  • Engineering(all)

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