Extending the FETs: Challenges and opportunities for new materials and structures

K. Uchida; T. Takahashi

doi:10.1149/06406.0003ecst

Extending the FETs: Challenges and opportunities for new materials and structures

K. Uchida, T. Takahashi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔT_ch) due to Joule heating and impact of ΔT_ch on analog performance of FETs utilizing nanoscale Si film will be shown.

Original language	English
Pages (from-to)	3-11
Number of pages	9
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0003ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9

ASJC Scopus subject areas

Engineering(all)

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@article{1b484017f1ae43c3800747b93f90f0b4,

title = "Extending the FETs: Challenges and opportunities for new materials and structures",

abstract = "Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.",

author = "K. Uchida and T. Takahashi",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0003ecst",

language = "English",

volume = "64",

pages = "3--11",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Extending the FETs

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

AU - Uchida, K.

AU - Takahashi, T.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.

AB - Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.

UR - http://www.scopus.com/inward/record.url?scp=84921269993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921269993&partnerID=8YFLogxK

U2 - 10.1149/06406.0003ecst

DO - 10.1149/06406.0003ecst

M3 - Conference article

AN - SCOPUS:84921269993

SN - 1938-5862

VL - 64

SP - 3

EP - 11

JO - ECS Transactions

JF - ECS Transactions

IS - 6

Y2 - 5 October 2014 through 9 October 2014

ER -

Extending the FETs: Challenges and opportunities for new materials and structures

Abstract

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