Extending the FETs: Challenges and opportunities for new materials and structures

Ken Uchida, T. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages3-11
Number of pages9
Volume64
Edition6
DOIs
Publication statusPublished - 2014
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

Other

Other6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period14/10/514/10/9

Fingerprint

Field effect transistors
Phonon scattering
Joule heating
Electron scattering
Thermal conductivity
Transistors
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uchida, K., & Takahashi, T. (2014). Extending the FETs: Challenges and opportunities for new materials and structures. In ECS Transactions (6 ed., Vol. 64, pp. 3-11). Electrochemical Society Inc.. https://doi.org/10.1149/06406.0003ecst

Extending the FETs : Challenges and opportunities for new materials and structures. / Uchida, Ken; Takahashi, T.

ECS Transactions. Vol. 64 6. ed. Electrochemical Society Inc., 2014. p. 3-11.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K & Takahashi, T 2014, Extending the FETs: Challenges and opportunities for new materials and structures. in ECS Transactions. 6 edn, vol. 64, Electrochemical Society Inc., pp. 3-11, 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico, 14/10/5. https://doi.org/10.1149/06406.0003ecst
Uchida K, Takahashi T. Extending the FETs: Challenges and opportunities for new materials and structures. In ECS Transactions. 6 ed. Vol. 64. Electrochemical Society Inc. 2014. p. 3-11 https://doi.org/10.1149/06406.0003ecst
Uchida, Ken ; Takahashi, T. / Extending the FETs : Challenges and opportunities for new materials and structures. ECS Transactions. Vol. 64 6. ed. Electrochemical Society Inc., 2014. pp. 3-11
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