Extension of U* to electro-static problem and its application to structural design for porous low-k dielectric film

Masaki Omiya, Shunsuke Miyagawa, Kunihiro Takahashi

Research output: Contribution to journalArticle

Abstract

Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (AD as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical strength and dielectric constant of porous low-k dielectrics by finite element method and U* method. The U* method expresses a degree of connection between a loading point and an internal arbitrary point. The effects of porosity of porous low-k dielectrics on the mechanical strength and dielectric constant were discussed.

Original languageEnglish
Pages (from-to)999-1006
Number of pages8
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume75
Issue number756
Publication statusPublished - 2009 Aug

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Dielectric films
Structural design
Strength of materials
Permittivity
LSI circuits
Porosity
Chemical mechanical polishing
Electric wiring
Aluminum
Low-k dielectric
Copper
Capacitance
Metals
Finite element method

Keywords

  • Dielectric constant
  • Elasticity
  • Finite element method
  • Porosity
  • Structural analysis
  • Structural design
  • Young's modulus

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

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title = "Extension of U* to electro-static problem and its application to structural design for porous low-k dielectric film",
abstract = "Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (AD as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical strength and dielectric constant of porous low-k dielectrics by finite element method and U* method. The U* method expresses a degree of connection between a loading point and an internal arbitrary point. The effects of porosity of porous low-k dielectrics on the mechanical strength and dielectric constant were discussed.",
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T1 - Extension of U* to electro-static problem and its application to structural design for porous low-k dielectric film

AU - Omiya, Masaki

AU - Miyagawa, Shunsuke

AU - Takahashi, Kunihiro

PY - 2009/8

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N2 - Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (AD as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical strength and dielectric constant of porous low-k dielectrics by finite element method and U* method. The U* method expresses a degree of connection between a loading point and an internal arbitrary point. The effects of porosity of porous low-k dielectrics on the mechanical strength and dielectric constant were discussed.

AB - Higher performance large scale integration (LSI) requires copper (Cu) instead of aluminum (AD as a wiring metal because of its superior electrical conductivity. These LSI also requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to keep the mechanical strength of porous low-k dielectrics during increasing porosity. In this paper, we studied the mechanical strength and dielectric constant of porous low-k dielectrics by finite element method and U* method. The U* method expresses a degree of connection between a loading point and an internal arbitrary point. The effects of porosity of porous low-k dielectrics on the mechanical strength and dielectric constant were discussed.

KW - Dielectric constant

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KW - Porosity

KW - Structural analysis

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KW - Young's modulus

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