Abstract
Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | SPIE |
| Volume | 9365 |
| ISBN (Print) | 9781628414554 |
| DOIs | |
| Publication status | Published - 2015 |
| Event | Integrated Optics: Devices, Materials, and Technologies XIX - San Francisco, United States Duration: 2015 Feb 9 → 2015 Feb 11 |
Other
| Other | Integrated Optics: Devices, Materials, and Technologies XIX |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 15/2/9 → 15/2/11 |
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Keywords
- arrayed waveguide grating
- AWG
- external cavity laser
- silica planar light waveguide
- T-band
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications. / Shibutani, Hideki; Tomomatsu, Yasunori; Sawado, Yoshinori; Yoshizawa, Katsumi; Asakura, Hideaki; Idris, Nazirul Afham; Tsuda, Hiroyuki.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9365 SPIE, 2015. 93651I.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications
AU - Shibutani, Hideki
AU - Tomomatsu, Yasunori
AU - Sawado, Yoshinori
AU - Yoshizawa, Katsumi
AU - Asakura, Hideaki
AU - Idris, Nazirul Afham
AU - Tsuda, Hiroyuki
PY - 2015
Y1 - 2015
N2 - Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.
AB - Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.
KW - arrayed waveguide grating
KW - AWG
KW - external cavity laser
KW - silica planar light waveguide
KW - T-band
UR - http://www.scopus.com/inward/record.url?scp=84928816651&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84928816651&partnerID=8YFLogxK
U2 - 10.1117/12.2080652
DO - 10.1117/12.2080652
M3 - Conference contribution
AN - SCOPUS:84928816651
SN - 9781628414554
VL - 9365
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - SPIE
ER -