Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor

Shunsuke Takagaki, Hirofumi Yamada, Kei Noda

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiDing the influences of characteristic variations that are frequently observed in practical OFET devices.

Original languageEnglish
Article number03DC07
JournalJapanese Journal of Applied Physics
Volume55
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

Fingerprint

Organic field effect transistors
Contact resistance
contact resistance
Transistors
Parameter extraction
transistors
field effect transistors
Electric potential
Thin film transistors
electric potential
Calibration
traps
output
thin films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor. / Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei.

In: Japanese Journal of Applied Physics, Vol. 55, No. 3, 03DC07, 01.03.2016.

Research output: Contribution to journalArticle

@article{e317aadc29ed43d08d2d7e65560985e8,
title = "Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor",
abstract = "A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiDing the influences of characteristic variations that are frequently observed in practical OFET devices.",
author = "Shunsuke Takagaki and Hirofumi Yamada and Kei Noda",
year = "2016",
month = "3",
day = "1",
doi = "10.7567/JJAP.55.03DC07",
language = "English",
volume = "55",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3",

}

TY - JOUR

T1 - Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor

AU - Takagaki, Shunsuke

AU - Yamada, Hirofumi

AU - Noda, Kei

PY - 2016/3/1

Y1 - 2016/3/1

N2 - A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiDing the influences of characteristic variations that are frequently observed in practical OFET devices.

AB - A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiDing the influences of characteristic variations that are frequently observed in practical OFET devices.

UR - http://www.scopus.com/inward/record.url?scp=84959864118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959864118&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.03DC07

DO - 10.7567/JJAP.55.03DC07

M3 - Article

AN - SCOPUS:84959864118

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

M1 - 03DC07

ER -