Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro, Takuya Saraya, Toshiro Hiramoto, Toshiaki Ikoma

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

Original languageEnglish
Pages (from-to)858-860
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Telegraph
field effect transistors
insulators
traps
Silicon
Temperature
Electric potential
electric potential
silicon
Substrates

Keywords

  • MOSFET
  • Potential fluctuations
  • Random telegraph signal
  • Single electron trap
  • Split-gate

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures. / Ishikuro, Hiroki; Saraya, Takuya; Hiramoto, Toshiro; Ikoma, Toshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 2 SUPPL. B, 02.1996, p. 858-860.

Research output: Contribution to journalArticle

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