Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi, Masaya Notomi

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 μW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ∼ 0.5 μus.

Original languageEnglish
Pages (from-to)21108-21117
Number of pages10
JournalOptics Express
Volume17
Issue number23
DOIs
Publication statusPublished - 2009
Externally publishedYes

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optical bistability
photonics
silicon
crystals
Q factors
optics
heat

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity. / Haret, Laurent Daniel; Tanabe, Takasumi; Kuramochi, Eiichi; Notomi, Masaya.

In: Optics Express, Vol. 17, No. 23, 2009, p. 21108-21117.

Research output: Contribution to journalArticle

Haret, Laurent Daniel ; Tanabe, Takasumi ; Kuramochi, Eiichi ; Notomi, Masaya. / Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity. In: Optics Express. 2009 ; Vol. 17, No. 23. pp. 21108-21117.
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