Fabrication and application of micro tapered structure by proximity backside exposure

Yoshinori Matsumoto; Keiji Makabe

doi:10.1541/ieejsmas.129.480

Fabrication and application of micro tapered structure by proximity backside exposure

Yoshinori Matsumoto, Keiji Makabe

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.

Original language	English
Pages (from-to)	480-485+7
Journal	ieej transactions on sensors and micromachines
Volume	129
Issue number	12
DOIs	https://doi.org/10.1541/ieejsmas.129.480
Publication status	Published - 2009 Dec 1

Keywords

Back-side exposure
Lithography simulation
Su8 resist
Taper structure
Water-repellency

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.",

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AU - Makabe, Keiji

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N2 - In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.

AB - In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.

KW - Back-side exposure

KW - Lithography simulation

KW - Su8 resist

KW - Taper structure

KW - Water-repellency

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Fabrication and application of micro tapered structure by proximity backside exposure

Abstract

Keywords

ASJC Scopus subject areas

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