Abstract
In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.
| Original language | English |
|---|---|
| Journal | IEEJ Transactions on Sensors and Micromachines |
| Volume | 129 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2009 |
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Keywords
- Back-side exposure
- Lithography simulation
- Su8 resist
- Taper structure
- Water-repellency
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
Cite this
Fabrication and application of micro tapered structure by proximity backside exposure. / Matsumoto, Yoshinori; Makabe, Keiji.
In: IEEJ Transactions on Sensors and Micromachines, Vol. 129, No. 12, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and application of micro tapered structure by proximity backside exposure
AU - Matsumoto, Yoshinori
AU - Makabe, Keiji
PY - 2009
Y1 - 2009
N2 - In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.
AB - In this paper, the fabrication method of high aspect ratio tapered structure is proposed by using chemically-amplified epoxy-based negative resist SU8. Proximity exposure technique is used from the backside of 150μm thick glass substrate to change the amount of exposure by using conventional mask. The amount of exposure was transformed into micro tapered resist structure. Slit pattern from 5μm to 35 μm width was designed and exposed, the difference of exposure amount causes the resist height change from 25μm to 180μm. Polydimethylsiloxiane (PDMS) surface was transformed from the resist structure in order to improve the water-repellency. The repellency was highest at the diameter of 20μm, and the maximum contact angle was 172° and 165° on the average.
KW - Back-side exposure
KW - Lithography simulation
KW - Su8 resist
KW - Taper structure
KW - Water-repellency
UR - http://www.scopus.com/inward/record.url?scp=75349097524&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=75349097524&partnerID=8YFLogxK
U2 - 10.1541/ieejsmas.129.480
DO - 10.1541/ieejsmas.129.480
M3 - Article
AN - SCOPUS:75349097524
VL - 129
JO - IEEJ Transactions on Sensors and Micromachines
JF - IEEJ Transactions on Sensors and Micromachines
SN - 1341-8939
IS - 12
ER -