Fabrication and characterization of ferromagnetic tunnel junction with transition metal oxides

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

Research output: Contribution to journalArticle

Abstract

A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.

Original languageEnglish
Pages (from-to)63-66
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume10
Issue number1
Publication statusPublished - 2005 Mar
Externally publishedYes

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Tunnel junctions
Transition metals
Fabrication
Oxides
Magnetoresistance
Transport properties

Keywords

  • Ferromagnetic tunnel junction
  • Spin dependent transport
  • Transition metal oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)

Cite this

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AB - A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.

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