Abstract
A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.
| Original language | English |
|---|---|
| Pages (from-to) | 63-66 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 10 |
| Issue number | 1 |
| Publication status | Published - 2005 Mar |
| Externally published | Yes |
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Keywords
- Ferromagnetic tunnel junction
- Spin dependent transport
- Transition metal oxide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
- Engineering (miscellaneous)
Cite this
Fabrication and characterization of ferromagnetic tunnel junction with transition metal oxides. / Qin, Fei; Nozaki, Yukio; Matsuyama, Kimihide.
In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 10, No. 1, 03.2005, p. 63-66.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and characterization of ferromagnetic tunnel junction with transition metal oxides
AU - Qin, Fei
AU - Nozaki, Yukio
AU - Matsuyama, Kimihide
PY - 2005/3
Y1 - 2005/3
N2 - A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.
AB - A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.
KW - Ferromagnetic tunnel junction
KW - Spin dependent transport
KW - Transition metal oxide
UR - http://www.scopus.com/inward/record.url?scp=23644437154&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=23644437154&partnerID=8YFLogxK
M3 - Article
VL - 10
SP - 63
EP - 66
JO - Research Reports on Information Science and Electrical Engineering of Kyushu University
JF - Research Reports on Information Science and Electrical Engineering of Kyushu University
SN - 1342-3819
IS - 1
ER -