Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

Hideo Kaiju; Kenji Kondo; Nubla Basheer; Nobuyoshi Kawaguchi; Susanne White; Akihiko Hirata; Manabu Ishimaru; Yoshihiko Hirotsu; Akira Ishibashi

Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

Hideo Kaiju, Kenji Kondo, Nubla Basheer, Nobuyoshi Kawaguchi, Susanne White, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

Original language	English
Title of host publication	Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling
Pages	133-138
Number of pages	6
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	2010 MRS Spring Meeting - San Francisco, CA, United States Duration: 2010 Apr 5 → 2010 Apr 9

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1252
ISSN (Print)	0272-9172

Other

Other	2010 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	10/4/5 → 10/4/9

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

Fingerprint Dive into the research topics of 'Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials'. Together they form a unique fingerprint.

Cite this

Kaiju, H., Kondo, K., Basheer, N., Kawaguchi, N., White, S., Hirata, A., Ishimaru, M., Hirotsu, Y., & Ishibashi, A. (2010). Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. In Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling (pp. 133-138). (Materials Research Society Symposium Proceedings; Vol. 1252).

Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. / Kaiju, Hideo; Kondo, Kenji; Basheer, Nubla; Kawaguchi, Nobuyoshi; White, Susanne; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira.

Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. 2010. p. 133-138 (Materials Research Society Symposium Proceedings; Vol. 1252).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaiju, H, Kondo, K, Basheer, N, Kawaguchi, N, White, S, Hirata, A, Ishimaru, M, Hirotsu, Y & Ishibashi, A 2010, Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. in Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Materials Research Society Symposium Proceedings, vol. 1252, pp. 133-138, 2010 MRS Spring Meeting, San Francisco, CA, United States, 10/4/5.

Kaiju, Hideo ; Kondo, Kenji ; Basheer, Nubla ; Kawaguchi, Nobuyoshi ; White, Susanne ; Hirata, Akihiko ; Ishimaru, Manabu ; Hirotsu, Yoshihiko ; Ishibashi, Akira. / Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. 2010. pp. 133-138 (Materials Research Society Symposium Proceedings).

@inproceedings{93591026968141a3a36d71d8ac679b19,

title = "Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials",

abstract = "We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.",

author = "Hideo Kaiju and Kenji Kondo and Nubla Basheer and Nobuyoshi Kawaguchi and Susanne White and Akihiko Hirata and Manabu Ishimaru and Yoshihiko Hirotsu and Akira Ishibashi",

year = "2010",

month = dec,

day = "1",

language = "English",

isbn = "9781605112299",

series = "Materials Research Society Symposium Proceedings",

pages = "133--138",

booktitle = "Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling",

note = "2010 MRS Spring Meeting ; Conference date: 05-04-2010 Through 09-04-2010",

}

TY - GEN

T1 - Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

AU - Kaiju, Hideo

AU - Kondo, Kenji

AU - Basheer, Nubla

AU - Kawaguchi, Nobuyoshi

AU - White, Susanne

AU - Hirata, Akihiko

AU - Ishimaru, Manabu

AU - Hirotsu, Yoshihiko

AU - Ishibashi, Akira

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

AB - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

UR - http://www.scopus.com/inward/record.url?scp=79952414747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952414747&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:79952414747

SN - 9781605112299

T3 - Materials Research Society Symposium Proceedings

SP - 133

EP - 138

BT - Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling

T2 - 2010 MRS Spring Meeting

Y2 - 5 April 2010 through 9 April 2010

ER -