TY - GEN
T1 - Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials
AU - Kaiju, Hideo
AU - Kondo, Kenji
AU - Basheer, Nubla
AU - Kawaguchi, Nobuyoshi
AU - White, Susanne
AU - Hirata, Akihiko
AU - Ishimaru, Manabu
AU - Hirotsu, Yoshihiko
AU - Ishibashi, Akira
PY - 2010/12/1
Y1 - 2010/12/1
N2 - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.
AB - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.
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M3 - Conference contribution
AN - SCOPUS:79952414747
SN - 9781605112299
T3 - Materials Research Society Symposium Proceedings
SP - 133
EP - 138
BT - Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling
T2 - 2010 MRS Spring Meeting
Y2 - 5 April 2010 through 9 April 2010
ER -