Abstract
We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.
| Original language | English |
|---|---|
| Title of host publication | Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling |
| Pages | 133-138 |
| Number of pages | 6 |
| Publication status | Published - 2010 Dec 1 |
| Externally published | Yes |
| Event | 2010 MRS Spring Meeting - San Francisco, CA, United States Duration: 2010 Apr 5 → 2010 Apr 9 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1252 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2010 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 10/4/5 → 10/4/9 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. / Kaiju, Hideo; Kondo, Kenji; Basheer, Nubla; Kawaguchi, Nobuyoshi; White, Susanne; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira.
Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. 2010. p. 133-138 (Materials Research Society Symposium Proceedings; Vol. 1252).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials
AU - Kaiju, Hideo
AU - Kondo, Kenji
AU - Basheer, Nubla
AU - Kawaguchi, Nobuyoshi
AU - White, Susanne
AU - Hirata, Akihiko
AU - Ishimaru, Manabu
AU - Hirotsu, Yoshihiko
AU - Ishibashi, Akira
PY - 2010/12/1
Y1 - 2010/12/1
N2 - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.
AB - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.
UR - http://www.scopus.com/inward/record.url?scp=79952414747&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952414747&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:79952414747
SN - 9781605112299
T3 - Materials Research Society Symposium Proceedings
SP - 133
EP - 138
BT - Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling
ER -