Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

Hideo Kaiju; Kenji Kondo; Nubla Basheer; Nobuyoshi Kawaguchi; Susanne White; Akihiko Hirata; Manabu Ishimaru; Yoshihiko Hirotsu; Akira Ishibashi

doi:10.1557/proc-1252-j02-08

Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

Hideo Kaiju, Kenji Kondo, Nubla Basheer, Nobuyoshi Kawaguchi, Susanne White, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

Original language	English
Title of host publication	Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling
Publisher	Materials Research Society
Pages	133-138
Number of pages	6
ISBN (Print)	9781605112299
DOIs	https://doi.org/10.1557/proc-1252-j02-08
Publication status	Published - 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1252
ISSN (Print)	0272-9172

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Kaiju, H., Kondo, K., Basheer, N., Kawaguchi, N., White, S., Hirata, A., Ishimaru, M., Hirotsu, Y., & Ishibashi, A. (2010). Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. In Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling (pp. 133-138). (Materials Research Society Symposium Proceedings; Vol. 1252). Materials Research Society. https://doi.org/10.1557/proc-1252-j02-08

Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. / Kaiju, Hideo; Kondo, Kenji; Basheer, Nubla; Kawaguchi, Nobuyoshi; White, Susanne; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira.

Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Materials Research Society, 2010. p. 133-138 (Materials Research Society Symposium Proceedings; Vol. 1252).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaiju, H, Kondo, K, Basheer, N, Kawaguchi, N, White, S, Hirata, A, Ishimaru, M, Hirotsu, Y & Ishibashi, A 2010, Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. in Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Materials Research Society Symposium Proceedings, vol. 1252, Materials Research Society, pp. 133-138. https://doi.org/10.1557/proc-1252-j02-08

Kaiju H, Kondo K, Basheer N, Kawaguchi N, White S, Hirata A et al. Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. In Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Materials Research Society. 2010. p. 133-138. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/proc-1252-j02-08

Kaiju, Hideo ; Kondo, Kenji ; Basheer, Nubla ; Kawaguchi, Nobuyoshi ; White, Susanne ; Hirata, Akihiko ; Ishimaru, Manabu ; Hirotsu, Yoshihiko ; Ishibashi, Akira. / Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials. Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Materials Research Society, 2010. pp. 133-138 (Materials Research Society Symposium Proceedings).

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abstract = "We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.",

author = "Hideo Kaiju and Kenji Kondo and Nubla Basheer and Nobuyoshi Kawaguchi and Susanne White and Akihiko Hirata and Manabu Ishimaru and Yoshihiko Hirotsu and Akira Ishibashi",

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AU - Kaiju, Hideo

AU - Kondo, Kenji

AU - Basheer, Nubla

AU - Kawaguchi, Nobuyoshi

AU - White, Susanne

AU - Hirata, Akihiko

AU - Ishimaru, Manabu

AU - Hirotsu, Yoshihiko

AU - Ishibashi, Akira

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N2 - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

AB - We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

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