Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

Masayuki Katagiri, Yuichi Yamazaki, Naoshi Sakuma, Mariko Suzuki, Tadashi Sakai, Makoto Wada, Naofumi Nakamura, Noriaki Matsunaga, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages44-46
Number of pages3
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period09/6/109/6/3

Fingerprint

Carbon Nanotubes
Plasma enhanced chemical vapor deposition
Carbon nanotubes
Electric properties
Fabrication
Current density

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Katagiri, M., Yamazaki, Y., Sakuma, N., Suzuki, M., Sakai, T., Wada, M., ... Awano, Y. (2009). Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 44-46). [5090336] https://doi.org/10.1109/IITC.2009.5090336

Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. / Katagiri, Masayuki; Yamazaki, Yuichi; Sakuma, Naoshi; Suzuki, Mariko; Sakai, Tadashi; Wada, Makoto; Nakamura, Naofumi; Matsunaga, Noriaki; Sato, Shintaro; Nihei, Mizuhisa; Awano, Yuji.

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 44-46 5090336.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Katagiri, M, Yamazaki, Y, Sakuma, N, Suzuki, M, Sakai, T, Wada, M, Nakamura, N, Matsunaga, N, Sato, S, Nihei, M & Awano, Y 2009, Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. in Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009., 5090336, pp. 44-46, 2009 IEEE International Interconnect Technology Conference, IITC 2009, Sapporo, Hokkaido, Japan, 09/6/1. https://doi.org/10.1109/IITC.2009.5090336
Katagiri M, Yamazaki Y, Sakuma N, Suzuki M, Sakai T, Wada M et al. Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 44-46. 5090336 https://doi.org/10.1109/IITC.2009.5090336
Katagiri, Masayuki ; Yamazaki, Yuichi ; Sakuma, Naoshi ; Suzuki, Mariko ; Sakai, Tadashi ; Wada, Makoto ; Nakamura, Naofumi ; Matsunaga, Noriaki ; Sato, Shintaro ; Nihei, Mizuhisa ; Awano, Yuji. / Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. pp. 44-46
@inproceedings{b6363aea8e454c90a2bf33ffeb1e88de,
title = "Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties",
abstract = "We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.",
author = "Masayuki Katagiri and Yuichi Yamazaki and Naoshi Sakuma and Mariko Suzuki and Tadashi Sakai and Makoto Wada and Naofumi Nakamura and Noriaki Matsunaga and Shintaro Sato and Mizuhisa Nihei and Yuji Awano",
year = "2009",
doi = "10.1109/IITC.2009.5090336",
language = "English",
isbn = "9781424444939",
pages = "44--46",
booktitle = "Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009",

}

TY - GEN

T1 - Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

AU - Katagiri, Masayuki

AU - Yamazaki, Yuichi

AU - Sakuma, Naoshi

AU - Suzuki, Mariko

AU - Sakai, Tadashi

AU - Wada, Makoto

AU - Nakamura, Naofumi

AU - Matsunaga, Noriaki

AU - Sato, Shintaro

AU - Nihei, Mizuhisa

AU - Awano, Yuji

PY - 2009

Y1 - 2009

N2 - We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.

AB - We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.

UR - http://www.scopus.com/inward/record.url?scp=70349463106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349463106&partnerID=8YFLogxK

U2 - 10.1109/IITC.2009.5090336

DO - 10.1109/IITC.2009.5090336

M3 - Conference contribution

SN - 9781424444939

SP - 44

EP - 46

BT - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

ER -