Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

Masayuki Katagiri, Yuichi Yamazaki, Naoshi Sakuma, Mariko Suzuki, Tadashi Sakai, Makoto Wada, Naofumi Nakamura, Noriaki Matsunaga, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages44-46
Number of pages3
DOIs
Publication statusPublished - 2009 Oct 1
Externally publishedYes
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period09/6/109/6/3

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Katagiri, M., Yamazaki, Y., Sakuma, N., Suzuki, M., Sakai, T., Wada, M., Nakamura, N., Matsunaga, N., Sato, S., Nihei, M., & Awano, Y. (2009). Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 44-46). [5090336] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090336