Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

Masayuki Katagiri; Yuichi Yamazaki; Naoshi Sakuma; Mariko Suzuki; Tadashi Sakai; Makoto Wada; Naofumi Nakamura; Noriaki Matsunaga; Shintaro Sato; Mizuhisa Nihei; Yuji Awano

doi:10.1109/IITC.2009.5090336

Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

Masayuki Katagiri, Yuichi Yamazaki, Naoshi Sakuma, Mariko Suzuki, Tadashi Sakai, Makoto Wada, Naofumi Nakamura, Noriaki Matsunaga, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×10⁸ A/cm².

Original language	English
Title of host publication	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages	44-46
Number of pages	3
DOIs	https://doi.org/10.1109/IITC.2009.5090336
Publication status	Published - 2009 Oct 1
Externally published	Yes
Event	2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan Duration: 2009 Jun 1 → 2009 Jun 3

Publication series

Name	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other	2009 IEEE International Interconnect Technology Conference, IITC 2009
Country/Territory	Japan
City	Sapporo, Hokkaido
Period	09/6/1 → 09/6/3

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/IITC.2009.5090336

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Katagiri, M., Yamazaki, Y., Sakuma, N., Suzuki, M., Sakai, T., Wada, M., Nakamura, N., Matsunaga, N., Sato, S., Nihei, M., & Awano, Y. (2009). Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 44-46). [5090336] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090336

Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. / Katagiri, Masayuki; Yamazaki, Yuichi; Sakuma, Naoshi et al.
Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 44-46 5090336 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Katagiri, M, Yamazaki, Y, Sakuma, N, Suzuki, M, Sakai, T, Wada, M, Nakamura, N, Matsunaga, N, Sato, S, Nihei, M & Awano, Y 2009, Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. in Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009., 5090336, Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009, pp. 44-46, 2009 IEEE International Interconnect Technology Conference, IITC 2009, Sapporo, Hokkaido, Japan, 09/6/1. https://doi.org/10.1109/IITC.2009.5090336

Katagiri M, Yamazaki Y, Sakuma N, Suzuki M, Sakai T, Wada M et al. Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 44-46. 5090336. (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). doi: 10.1109/IITC.2009.5090336

Katagiri, Masayuki ; Yamazaki, Yuichi ; Sakuma, Naoshi et al. / Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties. Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. pp. 44-46 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

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abstract = "We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.",

author = "Masayuki Katagiri and Yuichi Yamazaki and Naoshi Sakuma and Mariko Suzuki and Tadashi Sakai and Makoto Wada and Naofumi Nakamura and Noriaki Matsunaga and Shintaro Sato and Mizuhisa Nihei and Yuji Awano",

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AU - Suzuki, Mariko

AU - Sakai, Tadashi

AU - Wada, Makoto

AU - Nakamura, Naofumi

AU - Matsunaga, Noriaki

AU - Sato, Shintaro

AU - Nihei, Mizuhisa

AU - Awano, Yuji

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AB - We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.

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Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

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