Fabrication of a regular array of atomic silicon wires on silicon

Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

Research output: Contribution to journalConference article

Abstract

We report on the experimental realization of atomically straight, single wires of Si atoms on a Si surface. The Si wires were formed by solid-source molecular beam epitaxy (MBE) on a specific substrate prepared by a thermal treatment of a vicinal Si(111) wafer. The structures of the substrate and the atomic wire were investigated by scanning tunneling microscopy (STM). The substrate consists of an array of atomically straight step edges with a uniform structure serendipitously suitable for self-assembly of the atomic wires. The isotopic version of this structure - single lines of 29Si on 28Si- is expected to be the most basic building block for the all-silicon quantum computer [1], which utilizes the nuclear spins of individual Si isotopes as quantum bits (qubits).

Original languageEnglish
Article numberF7.15
Pages (from-to)311-316
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume832
Publication statusPublished - 2005 Aug 25
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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