Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching

K. Yamada, M. Yamada, H. Maki, Kohei M Itoh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2, 0.2-0.9, 0.9 μm2 and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.

Original languageEnglish
Article number28LT01
JournalNanotechnology
Volume29
Issue number28
DOIs
Publication statusPublished - 2018 May 11

Fingerprint

Anisotropic etching
Wet etching
Silicon
Etching
Metals
Fabrication
Potassium hydroxide
Silicon wafers
Aspect ratio
Geometry
potassium hydroxide

Keywords

  • anisotropic wet etching
  • metal-assisted chemical etching
  • nanoimprint
  • silicon nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching. / Yamada, K.; Yamada, M.; Maki, H.; Itoh, Kohei M.

In: Nanotechnology, Vol. 29, No. 28, 28LT01, 11.05.2018.

Research output: Contribution to journalArticle

@article{40a849b6e34c4c8ebe388f0f8a324eb4,
title = "Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching",
abstract = "Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2, 0.2-0.9, 0.9 μm2 and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.",
keywords = "anisotropic wet etching, metal-assisted chemical etching, nanoimprint, silicon nanowire",
author = "K. Yamada and M. Yamada and H. Maki and Itoh, {Kohei M}",
year = "2018",
month = "5",
day = "11",
doi = "10.1088/1361-6528/aac04b",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "28",

}

TY - JOUR

T1 - Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching

AU - Yamada, K.

AU - Yamada, M.

AU - Maki, H.

AU - Itoh, Kohei M

PY - 2018/5/11

Y1 - 2018/5/11

N2 - Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2, 0.2-0.9, 0.9 μm2 and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.

AB - Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2, 0.2-0.9, 0.9 μm2 and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.

KW - anisotropic wet etching

KW - metal-assisted chemical etching

KW - nanoimprint

KW - silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=85047770855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047770855&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aac04b

DO - 10.1088/1361-6528/aac04b

M3 - Article

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 28

M1 - 28LT01

ER -