Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current

Shintaro Sato, Akio Kawabata, Tatsuhiro Nozue, Daiyu Hondo, Tomo Murakami, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.

Original languageEnglish
Pages (from-to)373-383
Number of pages11
JournalSensors and Materials
Volume21
Issue number7
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

Carbon Nanotubes
Carbon nanotubes
Current density
Multiwalled carbon nanotubes (MWCN)
carbon nanotubes
current density
Fabrication
fabrication
Tungsten
Electric wiring
Temperature
Deterioration
wiring
Nanoparticles
plugs
Catalysts
deterioration
tungsten
catalysts
nanoparticles

Keywords

  • Carbon nanotube
  • Catalyst
  • Growth
  • Impactor
  • Interconnect
  • Low temperature
  • LSI
  • Nanoparticle
  • Particle
  • Via

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)

Cite this

Sato, S., Kawabata, A., Nozue, T., Hondo, D., Murakami, T., Hyakushima, T., ... Awano, Y. (2009). Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. Sensors and Materials, 21(7), 373-383.

Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. / Sato, Shintaro; Kawabata, Akio; Nozue, Tatsuhiro; Hondo, Daiyu; Murakami, Tomo; Hyakushima, Takashi; Nihei, Mizuhisa; Awano, Yuji.

In: Sensors and Materials, Vol. 21, No. 7, 2009, p. 373-383.

Research output: Contribution to journalArticle

Sato, S, Kawabata, A, Nozue, T, Hondo, D, Murakami, T, Hyakushima, T, Nihei, M & Awano, Y 2009, 'Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current', Sensors and Materials, vol. 21, no. 7, pp. 373-383.
Sato S, Kawabata A, Nozue T, Hondo D, Murakami T, Hyakushima T et al. Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. Sensors and Materials. 2009;21(7):373-383.
Sato, Shintaro ; Kawabata, Akio ; Nozue, Tatsuhiro ; Hondo, Daiyu ; Murakami, Tomo ; Hyakushima, Takashi ; Nihei, Mizuhisa ; Awano, Yuji. / Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. In: Sensors and Materials. 2009 ; Vol. 21, No. 7. pp. 373-383.
@article{001c69e561e647df84c1eef164a909f8,
title = "Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current",
abstract = "We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.",
keywords = "Carbon nanotube, Catalyst, Growth, Impactor, Interconnect, Low temperature, LSI, Nanoparticle, Particle, Via",
author = "Shintaro Sato and Akio Kawabata and Tatsuhiro Nozue and Daiyu Hondo and Tomo Murakami and Takashi Hyakushima and Mizuhisa Nihei and Yuji Awano",
year = "2009",
language = "English",
volume = "21",
pages = "373--383",
journal = "Sensors and Materials",
issn = "0914-4935",
publisher = "M Y U Scientific Publishing Division",
number = "7",

}

TY - JOUR

T1 - Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current

AU - Sato, Shintaro

AU - Kawabata, Akio

AU - Nozue, Tatsuhiro

AU - Hondo, Daiyu

AU - Murakami, Tomo

AU - Hyakushima, Takashi

AU - Nihei, Mizuhisa

AU - Awano, Yuji

PY - 2009

Y1 - 2009

N2 - We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.

AB - We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.

KW - Carbon nanotube

KW - Catalyst

KW - Growth

KW - Impactor

KW - Interconnect

KW - Low temperature

KW - LSI

KW - Nanoparticle

KW - Particle

KW - Via

UR - http://www.scopus.com/inward/record.url?scp=70450199403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450199403&partnerID=8YFLogxK

M3 - Article

VL - 21

SP - 373

EP - 383

JO - Sensors and Materials

JF - Sensors and Materials

SN - 0914-4935

IS - 7

ER -