Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current

Shintaro Sato, Akio Kawabata, Tatsuhiro Nozue, Daiyu Hondo, Tomo Murakami, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.

Original languageEnglish
Pages (from-to)373-383
Number of pages11
JournalSensors and Materials
Volume21
Issue number7
Publication statusPublished - 2009 Nov 27
Externally publishedYes

Keywords

  • Carbon nanotube
  • Catalyst
  • Growth
  • Impactor
  • Interconnect
  • LSI
  • Low temperature
  • Nanoparticle
  • Particle
  • Via

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current'. Together they form a unique fingerprint.

  • Cite this

    Sato, S., Kawabata, A., Nozue, T., Hondo, D., Murakami, T., Hyakushima, T., Nihei, M., & Awano, Y. (2009). Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. Sensors and Materials, 21(7), 373-383.